Highly reflective Ti/Ag/Pt contacts to p-GaN for high-efficiency GaN-based light-emitting diodes

Munsik Oh; Seonghoon Jeong; Youngun Gil; Kwang Soon Ahn; Hyunsoo Kim

doi:10.7567/JJAP.54.02BB01

Highly reflective Ti/Ag/Pt contacts to p-GaN for high-efficiency GaN-based light-emitting diodes

Munsik Oh
, Seonghoon Jeong
, Youngun Gil
, Kwang Soon Ahn^*
, Hyunsoo Kim

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Research output: Contribution to journal › Journal article › peer-review

3 Scopus citations

Abstract

The authors report highly efficient GaN-based light-emitting diodes (LEDs) fabricated with Ti/Ag/Pt reflective p-type contact. Compared with the reference Ni/Ag/Pt contact, Ti/Ag/Pt contact annealed at optimized thermal annealing condition produced low specific contact resistances of 5.7 × 10^-4 Ω cm², and good optical reflectivity of 88.4% at 450 nm. This is due to the generated interfacial Ti-O layer upon thermal annealing in N₂ ambient, which suppress the excessive inter-diffusion between Ag and GaN layers. Consequently, the LEDs fabricated with Ti/Ag/Pt contacts showed 32.6% brighter light output power and nearly the same forward voltages as compared to the reference LEDs fabricated with Ni/Ag/Pt contacts.

Original language	English
Article number	02BB01
Journal	Japanese Journal of Applied Physics
Volume	54
Issue number	2
DOIs	https://doi.org/10.7567/JJAP.54.02BB01
State	Published - 2015.02.1

Quacquarelli Symonds(QS) Subject Topics

Physics & Astronomy

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@article{4580ee4c1708403c997d9beb6f580801,

title = "Highly reflective Ti/Ag/Pt contacts to p-GaN for high-efficiency GaN-based light-emitting diodes",

abstract = "The authors report highly efficient GaN-based light-emitting diodes (LEDs) fabricated with Ti/Ag/Pt reflective p-type contact. Compared with the reference Ni/Ag/Pt contact, Ti/Ag/Pt contact annealed at optimized thermal annealing condition produced low specific contact resistances of 5.7 × 10-4 Ω cm2, and good optical reflectivity of 88.4\% at 450 nm. This is due to the generated interfacial Ti-O layer upon thermal annealing in N2 ambient, which suppress the excessive inter-diffusion between Ag and GaN layers. Consequently, the LEDs fabricated with Ti/Ag/Pt contacts showed 32.6\% brighter light output power and nearly the same forward voltages as compared to the reference LEDs fabricated with Ni/Ag/Pt contacts.",

author = "Munsik Oh and Seonghoon Jeong and Youngun Gil and Ahn, \{Kwang Soon\} and Hyunsoo Kim",

note = "Publisher Copyright: {\textcopyright} 2015 The Japan Society of Applied Physics.",

year = "2015",

month = feb,

day = "1",

doi = "10.7567/JJAP.54.02BB01",

language = "English",

volume = "54",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

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}

TY - JOUR

T1 - Highly reflective Ti/Ag/Pt contacts to p-GaN for high-efficiency GaN-based light-emitting diodes

AU - Oh, Munsik

AU - Jeong, Seonghoon

AU - Gil, Youngun

AU - Ahn, Kwang Soon

AU - Kim, Hyunsoo

PY - 2015/2/1

Y1 - 2015/2/1

N2 - The authors report highly efficient GaN-based light-emitting diodes (LEDs) fabricated with Ti/Ag/Pt reflective p-type contact. Compared with the reference Ni/Ag/Pt contact, Ti/Ag/Pt contact annealed at optimized thermal annealing condition produced low specific contact resistances of 5.7 × 10-4 Ω cm2, and good optical reflectivity of 88.4% at 450 nm. This is due to the generated interfacial Ti-O layer upon thermal annealing in N2 ambient, which suppress the excessive inter-diffusion between Ag and GaN layers. Consequently, the LEDs fabricated with Ti/Ag/Pt contacts showed 32.6% brighter light output power and nearly the same forward voltages as compared to the reference LEDs fabricated with Ni/Ag/Pt contacts.

AB - The authors report highly efficient GaN-based light-emitting diodes (LEDs) fabricated with Ti/Ag/Pt reflective p-type contact. Compared with the reference Ni/Ag/Pt contact, Ti/Ag/Pt contact annealed at optimized thermal annealing condition produced low specific contact resistances of 5.7 × 10-4 Ω cm2, and good optical reflectivity of 88.4% at 450 nm. This is due to the generated interfacial Ti-O layer upon thermal annealing in N2 ambient, which suppress the excessive inter-diffusion between Ag and GaN layers. Consequently, the LEDs fabricated with Ti/Ag/Pt contacts showed 32.6% brighter light output power and nearly the same forward voltages as compared to the reference LEDs fabricated with Ni/Ag/Pt contacts.

UR - https://www.scopus.com/pages/publications/84923182802

U2 - 10.7567/JJAP.54.02BB01

DO - 10.7567/JJAP.54.02BB01

M3 - Journal article

AN - SCOPUS:84923182802

SN - 0021-4922

VL - 54

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 2

M1 - 02BB01

ER -

Highly reflective Ti/Ag/Pt contacts to p-GaN for high-efficiency GaN-based light-emitting diodes

Abstract

Quacquarelli Symonds(QS) Subject Topics

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