Highly uniform and reproducible 850 nm vertical-cavity surface-emitting lasers grown by MOCVD

H. J. Jang; Y. H. Song; B. J. Jeong; K. H. Lee; J. K. Son; Y. H. Lee; D. G. Choi; S. S. Yang; J. W. Yang; K. Y. Lim; G. M. Yang

Highly uniform and reproducible 850 nm vertical-cavity surface-emitting lasers grown by MOCVD

H. J. Jang^*
, Y. H. Song
, B. J. Jeong
, K. H. Lee
, J. K. Son
, Y. H. Lee
, D. G. Choi
, S. S. Yang
, J. W. Yang
, K. Y. Lim
, G. M. Yang

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Jeonbuk National University

Research output: Contribution to conference › Paper › peer-review

Abstract

Metallorganic chemical vapor deposition (MOCVD) was used to grow 850 nm vertical cavity surface-emitting lasers (VCSEL). A uniform Fabry-Perot cavity mode was achieved across a three-inch diameter with a standard deviation of 1.2 nm. Composition uniformity was obtained for the Al_0.98Ga_0.02As layer to be oxidized for oxide current aperture. The uniformity, composition and the device characteristics of Fabry-Perot cavity mode devices was also presented.

Original language	English
Pages	II592-II593
State	Published - 2001
Event	4th Pacific Rim Conference on Lasers and Electro-Optics - Chiba, Japan Duration: 2001.07.15 → 2001.07.19

Conference

Conference	4th Pacific Rim Conference on Lasers and Electro-Optics
Country/Territory	Japan
City	Chiba
Period	01.07.15 → 01.07.19

Quacquarelli Symonds(QS) Subject Topics

Materials Science
Engineering - Electrical & Electronic
Engineering - Petroleum
Physics & Astronomy

Cite this

@conference{398fc931407b4c29bc8f419b1073a279,

title = "Highly uniform and reproducible 850 nm vertical-cavity surface-emitting lasers grown by MOCVD",

abstract = "Metallorganic chemical vapor deposition (MOCVD) was used to grow 850 nm vertical cavity surface-emitting lasers (VCSEL). A uniform Fabry-Perot cavity mode was achieved across a three-inch diameter with a standard deviation of 1.2 nm. Composition uniformity was obtained for the Al0.98Ga0.02As layer to be oxidized for oxide current aperture. The uniformity, composition and the device characteristics of Fabry-Perot cavity mode devices was also presented.",

author = "Jang, \{H. J.\} and Song, \{Y. H.\} and Jeong, \{B. J.\} and Lee, \{K. H.\} and Son, \{J. K.\} and Lee, \{Y. H.\} and Choi, \{D. G.\} and Yang, \{S. S.\} and Yang, \{J. W.\} and Lim, \{K. Y.\} and Yang, \{G. M.\}",

year = "2001",

language = "English",

pages = "II592--II593",

note = "4th Pacific Rim Conference on Lasers and Electro-Optics ; Conference date: 15-07-2001 Through 19-07-2001",

}

TY - CONF

T1 - Highly uniform and reproducible 850 nm vertical-cavity surface-emitting lasers grown by MOCVD

AU - Jang, H. J.

AU - Song, Y. H.

AU - Jeong, B. J.

AU - Lee, K. H.

AU - Son, J. K.

AU - Lee, Y. H.

AU - Choi, D. G.

AU - Yang, S. S.

AU - Yang, J. W.

AU - Lim, K. Y.

AU - Yang, G. M.

PY - 2001

Y1 - 2001

N2 - Metallorganic chemical vapor deposition (MOCVD) was used to grow 850 nm vertical cavity surface-emitting lasers (VCSEL). A uniform Fabry-Perot cavity mode was achieved across a three-inch diameter with a standard deviation of 1.2 nm. Composition uniformity was obtained for the Al0.98Ga0.02As layer to be oxidized for oxide current aperture. The uniformity, composition and the device characteristics of Fabry-Perot cavity mode devices was also presented.

AB - Metallorganic chemical vapor deposition (MOCVD) was used to grow 850 nm vertical cavity surface-emitting lasers (VCSEL). A uniform Fabry-Perot cavity mode was achieved across a three-inch diameter with a standard deviation of 1.2 nm. Composition uniformity was obtained for the Al0.98Ga0.02As layer to be oxidized for oxide current aperture. The uniformity, composition and the device characteristics of Fabry-Perot cavity mode devices was also presented.

UR - https://www.scopus.com/pages/publications/20244369378

M3 - Paper

AN - SCOPUS:20244369378

SP - II592-II593

T2 - 4th Pacific Rim Conference on Lasers and Electro-Optics

Y2 - 15 July 2001 through 19 July 2001

ER -

Highly uniform and reproducible 850 nm vertical-cavity surface-emitting lasers grown by MOCVD

Abstract

Conference

Quacquarelli Symonds(QS) Subject Topics

Other files and links

Fingerprint

Cite this