Hopping conduction of amorphous InOx films in the presence of an electric hard gap in the electron density of states

Ju Jin Kim; Hu Jong Lee

doi:10.1016/0921-4526(94)90991-1

Hopping conduction of amorphous InO_x films in the presence of an electric hard gap in the electron density of states

Ju Jin Kim^*
, Hu Jong Lee

^*Corresponding author for this work

Department of Physics

Pohang University of Science and Technology

Research output: Contribution to journal › Journal article › peer-review

Abstract

Amorphous indium oxide films deep in the insulating regime, show a crossover from the Efros-Shklovskii variable-range-hopping conduction to a simple-activation conduction across a hard gap. The rigid gap, resulting from hardening of the parabolic Coulomb gap near the Fermi level, is extremely insensitive to a magnetic field, which provides strong evidence of its non-magnetic nature.

Original language	English
Pages (from-to)	1323-1324
Number of pages	2
Journal	Physica B: Physics of Condensed Matter
Volume	194-196
Issue number	PART 1
DOIs	https://doi.org/10.1016/0921-4526(94)90991-1
State	Published - 1994.02.2

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@article{f0127515155d4295a4564cc055376531,

title = "Hopping conduction of amorphous InOx films in the presence of an electric hard gap in the electron density of states",

abstract = "Amorphous indium oxide films deep in the insulating regime, show a crossover from the Efros-Shklovskii variable-range-hopping conduction to a simple-activation conduction across a hard gap. The rigid gap, resulting from hardening of the parabolic Coulomb gap near the Fermi level, is extremely insensitive to a magnetic field, which provides strong evidence of its non-magnetic nature.",

author = "Kim, \{Ju Jin\} and Lee, \{Hu Jong\}",

year = "1994",

month = feb,

day = "2",

doi = "10.1016/0921-4526(94)90991-1",

language = "English",

volume = "194-196",

pages = "1323--1324",

journal = "Physica B: Physics of Condensed Matter",

issn = "0921-4526",

number = "PART 1",

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T1 - Hopping conduction of amorphous InOx films in the presence of an electric hard gap in the electron density of states

AU - Kim, Ju Jin

AU - Lee, Hu Jong

PY - 1994/2/2

Y1 - 1994/2/2

N2 - Amorphous indium oxide films deep in the insulating regime, show a crossover from the Efros-Shklovskii variable-range-hopping conduction to a simple-activation conduction across a hard gap. The rigid gap, resulting from hardening of the parabolic Coulomb gap near the Fermi level, is extremely insensitive to a magnetic field, which provides strong evidence of its non-magnetic nature.

AB - Amorphous indium oxide films deep in the insulating regime, show a crossover from the Efros-Shklovskii variable-range-hopping conduction to a simple-activation conduction across a hard gap. The rigid gap, resulting from hardening of the parabolic Coulomb gap near the Fermi level, is extremely insensitive to a magnetic field, which provides strong evidence of its non-magnetic nature.

UR - https://www.scopus.com/pages/publications/17544399758

U2 - 10.1016/0921-4526(94)90991-1

DO - 10.1016/0921-4526(94)90991-1

M3 - Journal article

AN - SCOPUS:17544399758

SN - 0921-4526

VL - 194-196

SP - 1323

EP - 1324

JO - Physica B: Physics of Condensed Matter

JF - Physica B: Physics of Condensed Matter

IS - PART 1

ER -

Hopping conduction of amorphous InO_x films in the presence of an electric hard gap in the electron density of states

Abstract

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