Abstract
Here we designed horizontally-connected ZnO thin films and graphene in order to combine advantages of ZnO thin films, which are high on/off ratio and photo responsivity, and the superior mobility and sensitivity of graphene for applications in thin film transistors (TFTs) and flexible photodetectors. To synthesize the ZnO/graphene hybrid films, a 70-nm-thick ZnO thin film with a uniformly flat surface deposited by the atomic layer deposition process was horizontally connected with highly crystalline monolayer graphene grown by thermal chemical vapor deposition. The photocurrent on-off ratio, response time, and recovery time of the hybrid photodetectors were estimated to be 10 2 , 34 s, and 27 s, respectively. The photocurrent from the hybrid photodetector decreased only by two-fold, whereas a significant decrease in photocurrent by two orders of magnitude was observed from the ZnO thin film based photodetectors after 10 5 cycles of 5-mm radius bending. The hybrid TFT exhibited unipolar n-channel transistor behavior with electron mobility of 68.7 cm 2 /V s and on-off ratio of 10 7 .
| Original language | English |
|---|---|
| Pages (from-to) | 238-241 |
| Number of pages | 4 |
| Journal | Applied Surface Science |
| Volume | 379 |
| DOIs | |
| State | Published - 2016.08.30 |
Keywords
- Photodetectors
- Thin film transistors
- ZnO/graphene hybrid films
Quacquarelli Symonds(QS) Subject Topics
- Materials Science
- Chemistry
- Physics & Astronomy
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