Hybrid ITO transparent conductive electrodes embedded with Pt nanoclusters for enhanced output efficiency of GaN-based light-emitting diodes

Youngun Gil; Hyunsoo Kim

doi:10.1016/j.tsf.2016.02.041

Hybrid ITO transparent conductive electrodes embedded with Pt nanoclusters for enhanced output efficiency of GaN-based light-emitting diodes

Youngun Gil
, Hyunsoo Kim^*

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Jeonbuk National University

Research output: Contribution to journal › Journal article › peer-review

9 Scopus citations

Abstract

Hybrid ITO transparent conductive electrodes (TCEs) embedded with Pt nanoclusters were investigated for the fabrication of reliable and efficient GaN-based light-emitting diodes (LEDs). Hybrid ITO TCEs fabricated by combining interfacial Pt nanoclusters with a coverage ratio of 23.7% (acting as an Ohmic patch) and a 100-nm thick sputtered ITO film yielded a low specific contact resistance of ~ 1.3 × 10^{- 2} ω cm², a sheet resistance of 24 ω/sq, and a high optical transmittance of 90% at 450 nm. LEDs fabricated with the hybrid ITO TCEs showed a 17.2% brighter light output power compared to reference LEDs. This indicates that the high-quality sputtered ITO film can be practically used in LED applications by embedding Pt nanoclusters.

Original language	English
Pages (from-to)	307-312
Number of pages	6
Journal	Thin Solid Films
Volume	603
DOIs	https://doi.org/10.1016/j.tsf.2016.02.041
State	Published - 2016.03.31

Keywords

Hybrid ITO
Light emitting diodes
Plasma damage
Pt nanoclusters
Transparent conductive electrodes

Quacquarelli Symonds(QS) Subject Topics

Materials Science
Physics & Astronomy

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10.1016/j.tsf.2016.02.041

Cite this

@article{cea179e724674786bb493203a785ba72,

title = "Hybrid ITO transparent conductive electrodes embedded with Pt nanoclusters for enhanced output efficiency of GaN-based light-emitting diodes",

abstract = "Hybrid ITO transparent conductive electrodes (TCEs) embedded with Pt nanoclusters were investigated for the fabrication of reliable and efficient GaN-based light-emitting diodes (LEDs). Hybrid ITO TCEs fabricated by combining interfacial Pt nanoclusters with a coverage ratio of 23.7\% (acting as an Ohmic patch) and a 100-nm thick sputtered ITO film yielded a low specific contact resistance of \textasciitilde{} 1.3 × 10- 2 ω cm2, a sheet resistance of 24 ω/sq, and a high optical transmittance of 90\% at 450 nm. LEDs fabricated with the hybrid ITO TCEs showed a 17.2\% brighter light output power compared to reference LEDs. This indicates that the high-quality sputtered ITO film can be practically used in LED applications by embedding Pt nanoclusters.",

keywords = "Hybrid ITO, Light emitting diodes, Plasma damage, Pt nanoclusters, Transparent conductive electrodes",

author = "Youngun Gil and Hyunsoo Kim",

note = "Publisher Copyright: {\textcopyright} 2016 Elsevier B.V.",

year = "2016",

month = mar,

day = "31",

doi = "10.1016/j.tsf.2016.02.041",

language = "English",

volume = "603",

pages = "307--312",

journal = "Thin Solid Films",

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}

TY - JOUR

T1 - Hybrid ITO transparent conductive electrodes embedded with Pt nanoclusters for enhanced output efficiency of GaN-based light-emitting diodes

AU - Gil, Youngun

AU - Kim, Hyunsoo

PY - 2016/3/31

Y1 - 2016/3/31

N2 - Hybrid ITO transparent conductive electrodes (TCEs) embedded with Pt nanoclusters were investigated for the fabrication of reliable and efficient GaN-based light-emitting diodes (LEDs). Hybrid ITO TCEs fabricated by combining interfacial Pt nanoclusters with a coverage ratio of 23.7% (acting as an Ohmic patch) and a 100-nm thick sputtered ITO film yielded a low specific contact resistance of ~ 1.3 × 10- 2 ω cm2, a sheet resistance of 24 ω/sq, and a high optical transmittance of 90% at 450 nm. LEDs fabricated with the hybrid ITO TCEs showed a 17.2% brighter light output power compared to reference LEDs. This indicates that the high-quality sputtered ITO film can be practically used in LED applications by embedding Pt nanoclusters.

AB - Hybrid ITO transparent conductive electrodes (TCEs) embedded with Pt nanoclusters were investigated for the fabrication of reliable and efficient GaN-based light-emitting diodes (LEDs). Hybrid ITO TCEs fabricated by combining interfacial Pt nanoclusters with a coverage ratio of 23.7% (acting as an Ohmic patch) and a 100-nm thick sputtered ITO film yielded a low specific contact resistance of ~ 1.3 × 10- 2 ω cm2, a sheet resistance of 24 ω/sq, and a high optical transmittance of 90% at 450 nm. LEDs fabricated with the hybrid ITO TCEs showed a 17.2% brighter light output power compared to reference LEDs. This indicates that the high-quality sputtered ITO film can be practically used in LED applications by embedding Pt nanoclusters.

KW - Hybrid ITO

KW - Light emitting diodes

KW - Plasma damage

KW - Pt nanoclusters

KW - Transparent conductive electrodes

UR - https://www.scopus.com/pages/publications/84960083433

U2 - 10.1016/j.tsf.2016.02.041

DO - 10.1016/j.tsf.2016.02.041

M3 - Journal article

AN - SCOPUS:84960083433

SN - 0040-6090

VL - 603

SP - 307

EP - 312

JO - Thin Solid Films

JF - Thin Solid Films

ER -

Hybrid ITO transparent conductive electrodes embedded with Pt nanoclusters for enhanced output efficiency of GaN-based light-emitting diodes

Abstract

Keywords

Quacquarelli Symonds(QS) Subject Topics

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