Hydrogen effects on the electrical conductivity of pulsed laser deposited ZnO thin films

Tae Kwon Song; M. H. Kim; S. S. Kim; W. J. Kim; C. Park; R. K. Ko; K. J. Song

doi:10.1016/j.microc.2004.07.026

Hydrogen effects on the electrical conductivity of pulsed laser deposited ZnO thin films

Tae Kwon Song^*
, M. H. Kim
, S. S. Kim
, W. J. Kim
, C. Park
, R. K. Ko
, K. J. Song

^*Corresponding author for this work

Physics Education

Changwon National University
Korea Electrotechnology Research Institute

Research output: Contribution to journal › Conference article › peer-review

Abstract

Well c-axis oriented 320 nm and 160 nm thick ZnO thin films were deposited with pulsed laser deposition on Pt/Ti/SiO₂/Si(100) substrates. Diode characteristics of Au/ZnO/Pt in electrical conductivity were observed. The conductivity in forward bias was sensitive to the hydrogen annealing but almost insensitive in reverse bias. The conductivity of 320 nm thick film in forward bias increased from 6.1 × 10^-5 Ω^-1 cm ^-1 in as-deposited film to 3.3 × 10^-3 Ω^-1 cm^-1 in hydrogen annealed one at 200°C. The observed dielectric constant 70 was much higher than that of ceramic ZnO. Dielectric anomaly at about 1 kHz was observed and attributed to the space charge.

Original language	English
Pages (from-to)	113-118
Number of pages	6
Journal	Integrated Ferroelectrics
Volume	69
DOIs	https://doi.org/10.1016/j.microc.2004.07.026
State	Published - 2005
Event	16th International Symposium on Integrated Ferroelectrics, ISIF-16 - Gyeongju, Korea, Republic of Duration: 2004.04.5 → 2004.04.8

Keywords

Conductivity
Hydrogen
PLD
Thin film
ZnO

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10.1016/j.microc.2004.07.026

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@article{b01229d3971e4abb99cf0b73bb1862d5,

title = "Hydrogen effects on the electrical conductivity of pulsed laser deposited ZnO thin films",

abstract = "Well c-axis oriented 320 nm and 160 nm thick ZnO thin films were deposited with pulsed laser deposition on Pt/Ti/SiO2/Si(100) substrates. Diode characteristics of Au/ZnO/Pt in electrical conductivity were observed. The conductivity in forward bias was sensitive to the hydrogen annealing but almost insensitive in reverse bias. The conductivity of 320 nm thick film in forward bias increased from 6.1 × 10-5 Ω-1 cm -1 in as-deposited film to 3.3 × 10-3 Ω-1 cm-1 in hydrogen annealed one at 200°C. The observed dielectric constant 70 was much higher than that of ceramic ZnO. Dielectric anomaly at about 1 kHz was observed and attributed to the space charge.",

keywords = "Conductivity, Hydrogen, PLD, Thin film, ZnO",

author = "Song, \{Tae Kwon\} and Kim, \{M. H.\} and Kim, \{S. S.\} and Kim, \{W. J.\} and C. Park and Ko, \{R. K.\} and Song, \{K. J.\}",

year = "2005",

doi = "10.1016/j.microc.2004.07.026",

language = "English",

volume = "69",

pages = "113--118",

journal = "Integrated Ferroelectrics",

issn = "1058-4587",

note = "16th International Symposium on Integrated Ferroelectrics, ISIF-16 ; Conference date: 05-04-2004 Through 08-04-2004",

}

TY - JOUR

T1 - Hydrogen effects on the electrical conductivity of pulsed laser deposited ZnO thin films

AU - Song, Tae Kwon

AU - Kim, M. H.

AU - Kim, S. S.

AU - Kim, W. J.

AU - Park, C.

AU - Ko, R. K.

AU - Song, K. J.

PY - 2005

Y1 - 2005

N2 - Well c-axis oriented 320 nm and 160 nm thick ZnO thin films were deposited with pulsed laser deposition on Pt/Ti/SiO2/Si(100) substrates. Diode characteristics of Au/ZnO/Pt in electrical conductivity were observed. The conductivity in forward bias was sensitive to the hydrogen annealing but almost insensitive in reverse bias. The conductivity of 320 nm thick film in forward bias increased from 6.1 × 10-5 Ω-1 cm -1 in as-deposited film to 3.3 × 10-3 Ω-1 cm-1 in hydrogen annealed one at 200°C. The observed dielectric constant 70 was much higher than that of ceramic ZnO. Dielectric anomaly at about 1 kHz was observed and attributed to the space charge.

AB - Well c-axis oriented 320 nm and 160 nm thick ZnO thin films were deposited with pulsed laser deposition on Pt/Ti/SiO2/Si(100) substrates. Diode characteristics of Au/ZnO/Pt in electrical conductivity were observed. The conductivity in forward bias was sensitive to the hydrogen annealing but almost insensitive in reverse bias. The conductivity of 320 nm thick film in forward bias increased from 6.1 × 10-5 Ω-1 cm -1 in as-deposited film to 3.3 × 10-3 Ω-1 cm-1 in hydrogen annealed one at 200°C. The observed dielectric constant 70 was much higher than that of ceramic ZnO. Dielectric anomaly at about 1 kHz was observed and attributed to the space charge.

KW - Conductivity

KW - Hydrogen

KW - PLD

KW - Thin film

KW - ZnO

UR - https://www.scopus.com/pages/publications/33644769131

U2 - 10.1016/j.microc.2004.07.026

DO - 10.1016/j.microc.2004.07.026

M3 - Conference article

AN - SCOPUS:33644769131

SN - 1058-4587

VL - 69

SP - 113

EP - 118

JO - Integrated Ferroelectrics

JF - Integrated Ferroelectrics

T2 - 16th International Symposium on Integrated Ferroelectrics, ISIF-16

Y2 - 5 April 2004 through 8 April 2004

ER -

Hydrogen effects on the electrical conductivity of pulsed laser deposited ZnO thin films

Abstract

Keywords

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