III-nitride nanowires for emissive display technology

Veeramuthu Vignesh; Yuanpeng Wu; Sung Un Kim; Jeong Kyun Oh; Chandran Bagavath; Dae Young Um; Zetian Mi; Yong Ho Ra

doi:10.1080/15980316.2023.2282937

III-nitride nanowires for emissive display technology

Veeramuthu Vignesh
, Yuanpeng Wu
, Sung Un Kim
, Jeong Kyun Oh
, Chandran Bagavath
, Dae Young Um
, Zetian Mi^*
, Yong Ho Ra^*

^*Corresponding author for this work

Information Materials Engineering

Research output: Contribution to journal › Journal article › peer-review

15 Scopus citations

Abstract

The field of III-nitride (InGaN) nanowire micro light-emitting diode (µ-LED) displays is rapidly expanding and holds great promise, thanks to their chemical stability and outstanding performance across the entire visible spectrum. Notably, III-nitride (InGaN) nanowires, free from compositional substitutions, dislocations, and piezoelectric polarization effects associated with lateral strain relaxation with large surface-to-bulk-volume ratio, are advantage-missing in traditional planar counterparts. This comprehensive overview examines the potential landscape, associated challenges, strategies to overcome them, and opportunities for the development of advanced µ-LED displays with vibrant and accurate color representation, contributing to the advancement of next-generation display technologies. This study also covers the current obstacles faced by III-nitride (InGaN) nanowire-µ-LED displays and possible solutions to address them.

Original language	English
Pages (from-to)	13-59
Number of pages	47
Journal	Journal of Information Display
Volume	25
Issue number	1
DOIs	https://doi.org/10.1080/15980316.2023.2282937
State	Published - 2024

Keywords

display technology
full-color LED
InGaN nanowires
multi-quantum well (MQW)
µ-LED

Quacquarelli Symonds(QS) Subject Topics

Materials Science
Engineering - Electrical & Electronic
Engineering - Petroleum

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10.1080/15980316.2023.2282937

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title = "III-nitride nanowires for emissive display technology",

abstract = "The field of III-nitride (InGaN) nanowire micro light-emitting diode (µ-LED) displays is rapidly expanding and holds great promise, thanks to their chemical stability and outstanding performance across the entire visible spectrum. Notably, III-nitride (InGaN) nanowires, free from compositional substitutions, dislocations, and piezoelectric polarization effects associated with lateral strain relaxation with large surface-to-bulk-volume ratio, are advantage-missing in traditional planar counterparts. This comprehensive overview examines the potential landscape, associated challenges, strategies to overcome them, and opportunities for the development of advanced µ-LED displays with vibrant and accurate color representation, contributing to the advancement of next-generation display technologies. This study also covers the current obstacles faced by III-nitride (InGaN) nanowire-µ-LED displays and possible solutions to address them.",

keywords = "display technology, full-color LED, InGaN nanowires, multi-quantum well (MQW), µ-LED",

author = "Veeramuthu Vignesh and Yuanpeng Wu and Kim, \{Sung Un\} and Oh, \{Jeong Kyun\} and Chandran Bagavath and Um, \{Dae Young\} and Zetian Mi and Ra, \{Yong Ho\}",

note = "Publisher Copyright: {\textcopyright} 2023 The Author(s). Published by Informa UK Limited, trading as Taylor \& Francis Group on behalf of the Korean Information Display Society.",

year = "2024",

doi = "10.1080/15980316.2023.2282937",

language = "English",

volume = "25",

pages = "13--59",

journal = "Journal of Information Display",

issn = "1598-0316",

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}

TY - JOUR

T1 - III-nitride nanowires for emissive display technology

AU - Vignesh, Veeramuthu

AU - Wu, Yuanpeng

AU - Kim, Sung Un

AU - Oh, Jeong Kyun

AU - Bagavath, Chandran

AU - Um, Dae Young

AU - Mi, Zetian

AU - Ra, Yong Ho

PY - 2024

Y1 - 2024

N2 - The field of III-nitride (InGaN) nanowire micro light-emitting diode (µ-LED) displays is rapidly expanding and holds great promise, thanks to their chemical stability and outstanding performance across the entire visible spectrum. Notably, III-nitride (InGaN) nanowires, free from compositional substitutions, dislocations, and piezoelectric polarization effects associated with lateral strain relaxation with large surface-to-bulk-volume ratio, are advantage-missing in traditional planar counterparts. This comprehensive overview examines the potential landscape, associated challenges, strategies to overcome them, and opportunities for the development of advanced µ-LED displays with vibrant and accurate color representation, contributing to the advancement of next-generation display technologies. This study also covers the current obstacles faced by III-nitride (InGaN) nanowire-µ-LED displays and possible solutions to address them.

AB - The field of III-nitride (InGaN) nanowire micro light-emitting diode (µ-LED) displays is rapidly expanding and holds great promise, thanks to their chemical stability and outstanding performance across the entire visible spectrum. Notably, III-nitride (InGaN) nanowires, free from compositional substitutions, dislocations, and piezoelectric polarization effects associated with lateral strain relaxation with large surface-to-bulk-volume ratio, are advantage-missing in traditional planar counterparts. This comprehensive overview examines the potential landscape, associated challenges, strategies to overcome them, and opportunities for the development of advanced µ-LED displays with vibrant and accurate color representation, contributing to the advancement of next-generation display technologies. This study also covers the current obstacles faced by III-nitride (InGaN) nanowire-µ-LED displays and possible solutions to address them.

KW - display technology

KW - full-color LED

KW - InGaN nanowires

KW - multi-quantum well (MQW)

KW - µ-LED

UR - https://www.scopus.com/pages/publications/85177594565

U2 - 10.1080/15980316.2023.2282937

DO - 10.1080/15980316.2023.2282937

M3 - Journal article

AN - SCOPUS:85177594565

SN - 1598-0316

VL - 25

SP - 13

EP - 59

JO - Journal of Information Display

JF - Journal of Information Display

IS - 1

ER -

III-nitride nanowires for emissive display technology

Abstract

Keywords

Quacquarelli Symonds(QS) Subject Topics

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