Improved emission efficiency in InGaN light-emitting diodes using reverse bias in pulsed voltage

Jaehee Cho; Euijoon Yoon; Hyunsoo Kim; Yongjo Park; Joon Seop Kwak

doi:10.1109/LPT.2008.924893

Improved emission efficiency in InGaN light-emitting diodes using reverse bias in pulsed voltage

Jaehee Cho^*
, Euijoon Yoon
, Hyunsoo Kim
, Yongjo Park
, Joon Seop Kwak

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Seoul National University
Samsung
Sunchon National University

Research output: Contribution to journal › Journal article › peer-review

2 Scopus citations

Abstract

Improved emission efficiency in InGaN near-ultraviolet light-emitting diodes (LEDs) was demonstrated using reverse bias in pulsed voltage operation. Pulsed voltage operation of the LEDs from -3 to 3.2 V with a duty cycle of 50% at 10⁶ Hz produced a radiant flux of 4.0 mW, while pulsed operation from 0 to 3.2 V showed a radiant flux of 3.2 mW. The radiant flux further increased as the reverse voltage increased, at the same forward voltage. The improved radiant flux was attributed to uniform carrier redistribution at the multiquantum wells, due to a periodically applied voltage from reverse voltage to forward voltage with a frequency ranged from 10⁴ to 10⁶ Hz, resulting in improved emission efficiency in InGaN LEDs.

Original language	English
Pages (from-to)	1190-1192
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	20
Issue number	13
DOIs	https://doi.org/10.1109/LPT.2008.924893
State	Published - 2008.07.1

Keywords

GaN
Light-emitting diode (LED)

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10.1109/LPT.2008.924893

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title = "Improved emission efficiency in InGaN light-emitting diodes using reverse bias in pulsed voltage",

abstract = "Improved emission efficiency in InGaN near-ultraviolet light-emitting diodes (LEDs) was demonstrated using reverse bias in pulsed voltage operation. Pulsed voltage operation of the LEDs from -3 to 3.2 V with a duty cycle of 50\% at 106 Hz produced a radiant flux of 4.0 mW, while pulsed operation from 0 to 3.2 V showed a radiant flux of 3.2 mW. The radiant flux further increased as the reverse voltage increased, at the same forward voltage. The improved radiant flux was attributed to uniform carrier redistribution at the multiquantum wells, due to a periodically applied voltage from reverse voltage to forward voltage with a frequency ranged from 104 to 106 Hz, resulting in improved emission efficiency in InGaN LEDs.",

keywords = "GaN, Light-emitting diode (LED)",

author = "Jaehee Cho and Euijoon Yoon and Hyunsoo Kim and Yongjo Park and Kwak, \{Joon Seop\}",

year = "2008",

month = jul,

day = "1",

doi = "10.1109/LPT.2008.924893",

language = "English",

volume = "20",

pages = "1190--1192",

journal = "IEEE Photonics Technology Letters",

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TY - JOUR

T1 - Improved emission efficiency in InGaN light-emitting diodes using reverse bias in pulsed voltage

AU - Cho, Jaehee

AU - Yoon, Euijoon

AU - Kim, Hyunsoo

AU - Park, Yongjo

AU - Kwak, Joon Seop

PY - 2008/7/1

Y1 - 2008/7/1

N2 - Improved emission efficiency in InGaN near-ultraviolet light-emitting diodes (LEDs) was demonstrated using reverse bias in pulsed voltage operation. Pulsed voltage operation of the LEDs from -3 to 3.2 V with a duty cycle of 50% at 106 Hz produced a radiant flux of 4.0 mW, while pulsed operation from 0 to 3.2 V showed a radiant flux of 3.2 mW. The radiant flux further increased as the reverse voltage increased, at the same forward voltage. The improved radiant flux was attributed to uniform carrier redistribution at the multiquantum wells, due to a periodically applied voltage from reverse voltage to forward voltage with a frequency ranged from 104 to 106 Hz, resulting in improved emission efficiency in InGaN LEDs.

AB - Improved emission efficiency in InGaN near-ultraviolet light-emitting diodes (LEDs) was demonstrated using reverse bias in pulsed voltage operation. Pulsed voltage operation of the LEDs from -3 to 3.2 V with a duty cycle of 50% at 106 Hz produced a radiant flux of 4.0 mW, while pulsed operation from 0 to 3.2 V showed a radiant flux of 3.2 mW. The radiant flux further increased as the reverse voltage increased, at the same forward voltage. The improved radiant flux was attributed to uniform carrier redistribution at the multiquantum wells, due to a periodically applied voltage from reverse voltage to forward voltage with a frequency ranged from 104 to 106 Hz, resulting in improved emission efficiency in InGaN LEDs.

KW - GaN

KW - Light-emitting diode (LED)

UR - https://www.scopus.com/pages/publications/65449143929

U2 - 10.1109/LPT.2008.924893

DO - 10.1109/LPT.2008.924893

M3 - Journal article

AN - SCOPUS:65449143929

SN - 1041-1135

VL - 20

SP - 1190

EP - 1192

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 13

ER -

Improved emission efficiency in InGaN light-emitting diodes using reverse bias in pulsed voltage

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Keywords

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