Improved light extraction of GaN-based light-emitting diodes by an ion-damaged current blocking layer

In this study we investigate an InGaN layer damaged by the bombardment of energetic oxygen ions that is placed beneath a p-electrode to act as a current blocking layer (CBL). This method not only increases light output power but also alleviates the current crowding problem. Our tests showed that the light output power was increased by 10% at 60mA compared to conventional light-emitting diodes (LEDs). Additionally, our method improves LED productivity and effectiveness as it creates a nearly planar insulation layer through disordering or Ga sputtering of the InGaN surface and Ga ₂O ₃ formation.