Improved performance of GaAs tunnel diode by embedding InAs quantum dot layer for tandem solar cells

Kwang Wook Park; Seok Jin Kang; Sooraj Ravindran; Jung Wook Min; Soo Kyung Lee; Min Su Park; Yong Tak Lee

doi:10.7567/APEX.8.062302

Improved performance of GaAs tunnel diode by embedding InAs quantum dot layer for tandem solar cells

Kwang Wook Park
, Seok Jin Kang
, Sooraj Ravindran
, Jung Wook Min
, Soo Kyung Lee
, Min Su Park
, Yong Tak Lee

Electronic Materials Engineering

Gwangju Institute of Science and Technology
Korea Institute of Science and Technology

Research output: Contribution to journal › Journal article › peer-review

4 Scopus citations

Abstract

GaAs tunnel diodes (TDs) embedded with an InAs quantum dot (QD) layer were grown and their performance was compared with that of TDs without a QD layer. The TDs embedded with a QD layer showed enhanced peak tunnel current density and lower differential resistivity at zero bias compared with the TDs without a QD layer. The samples were then annealed to mimic the overlayer growth process. It was found that the performance degradation after annealing was smaller for the QD-layer-embedded TDs. The improved characteristics of the QD-layer-embedded GaAs TDs make them advantageous for interconnecting unit cells in tandem solar cells.

Original language	English
Article number	064101
Journal	Applied Physics Express
Volume	8
Issue number	6
DOIs	https://doi.org/10.7567/APEX.8.062302
State	Published - 2015.06.1

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10.7567/APEX.8.062302

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title = "Improved performance of GaAs tunnel diode by embedding InAs quantum dot layer for tandem solar cells",

abstract = "GaAs tunnel diodes (TDs) embedded with an InAs quantum dot (QD) layer were grown and their performance was compared with that of TDs without a QD layer. The TDs embedded with a QD layer showed enhanced peak tunnel current density and lower differential resistivity at zero bias compared with the TDs without a QD layer. The samples were then annealed to mimic the overlayer growth process. It was found that the performance degradation after annealing was smaller for the QD-layer-embedded TDs. The improved characteristics of the QD-layer-embedded GaAs TDs make them advantageous for interconnecting unit cells in tandem solar cells.",

author = "Park, \{Kwang Wook\} and Kang, \{Seok Jin\} and Sooraj Ravindran and Min, \{Jung Wook\} and Lee, \{Soo Kyung\} and Park, \{Min Su\} and Lee, \{Yong Tak\}",

note = "Publisher Copyright: {\textcopyright} 2015 The Japan Society of Applied Physics.",

year = "2015",

month = jun,

day = "1",

doi = "10.7567/APEX.8.062302",

language = "English",

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T1 - Improved performance of GaAs tunnel diode by embedding InAs quantum dot layer for tandem solar cells

AU - Park, Kwang Wook

AU - Kang, Seok Jin

AU - Ravindran, Sooraj

AU - Min, Jung Wook

AU - Lee, Soo Kyung

AU - Park, Min Su

AU - Lee, Yong Tak

PY - 2015/6/1

Y1 - 2015/6/1

N2 - GaAs tunnel diodes (TDs) embedded with an InAs quantum dot (QD) layer were grown and their performance was compared with that of TDs without a QD layer. The TDs embedded with a QD layer showed enhanced peak tunnel current density and lower differential resistivity at zero bias compared with the TDs without a QD layer. The samples were then annealed to mimic the overlayer growth process. It was found that the performance degradation after annealing was smaller for the QD-layer-embedded TDs. The improved characteristics of the QD-layer-embedded GaAs TDs make them advantageous for interconnecting unit cells in tandem solar cells.

AB - GaAs tunnel diodes (TDs) embedded with an InAs quantum dot (QD) layer were grown and their performance was compared with that of TDs without a QD layer. The TDs embedded with a QD layer showed enhanced peak tunnel current density and lower differential resistivity at zero bias compared with the TDs without a QD layer. The samples were then annealed to mimic the overlayer growth process. It was found that the performance degradation after annealing was smaller for the QD-layer-embedded TDs. The improved characteristics of the QD-layer-embedded GaAs TDs make them advantageous for interconnecting unit cells in tandem solar cells.

UR - https://www.scopus.com/pages/publications/84930712131

U2 - 10.7567/APEX.8.062302

DO - 10.7567/APEX.8.062302

M3 - Journal article

AN - SCOPUS:84930712131

SN - 1882-0778

VL - 8

JO - Applied Physics Express

JF - Applied Physics Express

IS - 6

M1 - 064101

ER -

Improved performance of GaAs tunnel diode by embedding InAs quantum dot layer for tandem solar cells

Abstract

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