Improved Structural and Electrical Properties of ZnO-Based Thin Film Transistors by Using Pulsed KrF Excimer Laser Irradiation

Min Suk Oh; R. Nirmala; R. Navamathavan

doi:10.1007/s11664-019-07080-2

Improved Structural and Electrical Properties of ZnO-Based Thin Film Transistors by Using Pulsed KrF Excimer Laser Irradiation

Min Suk Oh
, R. Nirmala
, R. Navamathavan^*

^*Corresponding author for this work

Metallurgical System Engineering

Research output: Contribution to journal › Journal article › peer-review

4 Scopus citations

Abstract

We report on the characteristics of ZnO-based thin film transistors (TFT) fabricated by radio frequency magnetron sputtering. The surface of the ZnO channel layers were treated by pulsed KrF excimer laser irradiation (ELI) to improve the structural and electrical properties. The ZnO TFT device is of bottom gate type, which consists of SiO₂ as a gate insulator and indium tin oxide as a gate deposited onto Corning glass substrates. The root-mean-square surface roughness and structural property of ZnO channel layer was significantly improved by the ELI treatment. The laser-treated ZnO TFT exhibited a saturation mobility of 19.27 cm²/V s, an on/off ratio greater than 10⁵, the off current of less than 10_-7 A, and a threshold voltage of 1.1 V. These results revealed the significant improvement of device characteristics and demonstrated that the pulsed KrF ELI treatment is an effective way to improve the ZnO TFT device performance.

Original language	English
Pages (from-to)	3137-3144
Number of pages	8
Journal	Journal of Electronic Materials
Volume	48
Issue number	5
DOIs	https://doi.org/10.1007/s11664-019-07080-2
State	Published - 2019.05

Keywords

Electrical properties
Laser treatment
Thin film transistor
ZnO

Quacquarelli Symonds(QS) Subject Topics

Materials Science
Engineering - Electrical & Electronic
Engineering - Petroleum
Physics & Astronomy

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10.1007/s11664-019-07080-2

Cite this

@article{63bf4433216349e7b18655fafd5ba56c,

title = "Improved Structural and Electrical Properties of ZnO-Based Thin Film Transistors by Using Pulsed KrF Excimer Laser Irradiation",

abstract = "We report on the characteristics of ZnO-based thin film transistors (TFT) fabricated by radio frequency magnetron sputtering. The surface of the ZnO channel layers were treated by pulsed KrF excimer laser irradiation (ELI) to improve the structural and electrical properties. The ZnO TFT device is of bottom gate type, which consists of SiO2 as a gate insulator and indium tin oxide as a gate deposited onto Corning glass substrates. The root-mean-square surface roughness and structural property of ZnO channel layer was significantly improved by the ELI treatment. The laser-treated ZnO TFT exhibited a saturation mobility of 19.27 cm2/V s, an on/off ratio greater than 105, the off current of less than 10-7 A, and a threshold voltage of 1.1 V. These results revealed the significant improvement of device characteristics and demonstrated that the pulsed KrF ELI treatment is an effective way to improve the ZnO TFT device performance.",

keywords = "Electrical properties, Laser treatment, Thin film transistor, ZnO",

author = "Oh, \{Min Suk\} and R. Nirmala and R. Navamathavan",

note = "Publisher Copyright: {\textcopyright} 2019 The Minerals, Metals \& Materials Society.",

year = "2019",

month = may,

doi = "10.1007/s11664-019-07080-2",

language = "English",

volume = "48",

pages = "3137--3144",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

number = "5",

}

TY - JOUR

T1 - Improved Structural and Electrical Properties of ZnO-Based Thin Film Transistors by Using Pulsed KrF Excimer Laser Irradiation

AU - Oh, Min Suk

AU - Nirmala, R.

AU - Navamathavan, R.

PY - 2019/5

Y1 - 2019/5

N2 - We report on the characteristics of ZnO-based thin film transistors (TFT) fabricated by radio frequency magnetron sputtering. The surface of the ZnO channel layers were treated by pulsed KrF excimer laser irradiation (ELI) to improve the structural and electrical properties. The ZnO TFT device is of bottom gate type, which consists of SiO2 as a gate insulator and indium tin oxide as a gate deposited onto Corning glass substrates. The root-mean-square surface roughness and structural property of ZnO channel layer was significantly improved by the ELI treatment. The laser-treated ZnO TFT exhibited a saturation mobility of 19.27 cm2/V s, an on/off ratio greater than 105, the off current of less than 10-7 A, and a threshold voltage of 1.1 V. These results revealed the significant improvement of device characteristics and demonstrated that the pulsed KrF ELI treatment is an effective way to improve the ZnO TFT device performance.

AB - We report on the characteristics of ZnO-based thin film transistors (TFT) fabricated by radio frequency magnetron sputtering. The surface of the ZnO channel layers were treated by pulsed KrF excimer laser irradiation (ELI) to improve the structural and electrical properties. The ZnO TFT device is of bottom gate type, which consists of SiO2 as a gate insulator and indium tin oxide as a gate deposited onto Corning glass substrates. The root-mean-square surface roughness and structural property of ZnO channel layer was significantly improved by the ELI treatment. The laser-treated ZnO TFT exhibited a saturation mobility of 19.27 cm2/V s, an on/off ratio greater than 105, the off current of less than 10-7 A, and a threshold voltage of 1.1 V. These results revealed the significant improvement of device characteristics and demonstrated that the pulsed KrF ELI treatment is an effective way to improve the ZnO TFT device performance.

KW - Electrical properties

KW - Laser treatment

KW - Thin film transistor

KW - ZnO

UR - https://www.scopus.com/pages/publications/85062611247

U2 - 10.1007/s11664-019-07080-2

DO - 10.1007/s11664-019-07080-2

M3 - Journal article

AN - SCOPUS:85062611247

SN - 0361-5235

VL - 48

SP - 3137

EP - 3144

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 5

ER -

Improved Structural and Electrical Properties of ZnO-Based Thin Film Transistors by Using Pulsed KrF Excimer Laser Irradiation

Abstract

Keywords

Quacquarelli Symonds(QS) Subject Topics

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