Improved technique for extraction of effective mobility by considering gate bias-dependent inversion charges in a floating-body Si/SiGe pMOSFET

Hagyoul Bae; Tewook Bang; Choong Ki Kim; Jae Hur; Seyeob Kim; Chang Hoon Jeon; Jun Young Park; Dae Chul Ahn; Gun Hee Kim; Yunik Son; Jae Hoon Lee; Yong Taik Kim; Seong Wan Ryu; Yang Kyu Choi

doi:10.1166/jnn.2017.14035

Improved technique for extraction of effective mobility by considering gate bias-dependent inversion charges in a floating-body Si/SiGe pMOSFET

Hagyoul Bae
, Tewook Bang
, Choong Ki Kim
, Jae Hur
, Seyeob Kim
, Chang Hoon Jeon
, Jun Young Park
, Dae Chul Ahn
, Gun Hee Kim
, Yunik Son
, Jae Hoon Lee
, Yong Taik Kim
, Seong Wan Ryu
, Yang Kyu Choi^*

^*Corresponding author for this work

Division of Electronic Engineering

Korea Advanced Institute of Science and Technology
SK Corporation

Research output: Contribution to journal › Journal article › peer-review

1 Scopus citations

Abstract

We report an accurate extraction technique of effective mobility (μ_eff) by considering gate-bias (V_GS)-dependent effective inversion charges (Q_{inv, eff)} as a normalized correction factor (σV_GS)) when using the gate-to-source/drain capacitance-voltage (C-V) measurement in a p-channel Si/SiGe MOSFET with a floating body structure. In the proposed technique, two different capacitance-voltage configurations: a gate-to-source/drain (C_G-SD) configuration without body contact and a gateto-source/drain/body (C_G-SDB) configuration with body contact are utilized for the accurate extraction of μ_eff.

Original language	English
Pages (from-to)	3247-3250
Number of pages	4
Journal	Journal of nanoscience and nanotechnology
Volume	17
Issue number	5
DOIs	https://doi.org/10.1166/jnn.2017.14035
State	Published - 2017

Keywords

Effective Inversion Channel
Effective Mobility
Empirical Modeling
SiGe MOSFET
Split C-V Method

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Bae, H., Bang, T., Kim, C. K., Hur, J., Kim, S., Jeon, C. H., Park, J. Y., Ahn, D. C., Kim, G. H., Son, Y., Lee, J. H., Kim, Y. T., Ryu, S. W., & Choi, Y. K. (2017). Improved technique for extraction of effective mobility by considering gate bias-dependent inversion charges in a floating-body Si/SiGe pMOSFET. Journal of nanoscience and nanotechnology, 17(5), 3247-3250. https://doi.org/10.1166/jnn.2017.14035

@article{b276424920054400bafab7de47db4630,

title = "Improved technique for extraction of effective mobility by considering gate bias-dependent inversion charges in a floating-body Si/SiGe pMOSFET",

abstract = "We report an accurate extraction technique of effective mobility (μeff) by considering gate-bias (VGS)-dependent effective inversion charges (Qinv, eff) as a normalized correction factor (σVGS)) when using the gate-to-source/drain capacitance-voltage (C-V) measurement in a p-channel Si/SiGe MOSFET with a floating body structure. In the proposed technique, two different capacitance-voltage configurations: a gate-to-source/drain (CG-SD) configuration without body contact and a gateto-source/drain/body (CG-SDB) configuration with body contact are utilized for the accurate extraction of μeff.",

keywords = "Effective Inversion Channel, Effective Mobility, Empirical Modeling, SiGe MOSFET, Split C-V Method",

author = "Hagyoul Bae and Tewook Bang and Kim, \{Choong Ki\} and Jae Hur and Seyeob Kim and Jeon, \{Chang Hoon\} and Park, \{Jun Young\} and Ahn, \{Dae Chul\} and Kim, \{Gun Hee\} and Yunik Son and Lee, \{Jae Hoon\} and Kim, \{Yong Taik\} and Ryu, \{Seong Wan\} and Choi, \{Yang Kyu\}",

year = "2017",

doi = "10.1166/jnn.2017.14035",

language = "English",

volume = "17",

pages = "3247--3250",

journal = "Journal of nanoscience and nanotechnology",

issn = "1533-4880",

number = "5",

}

Bae, H, Bang, T, Kim, CK, Hur, J, Kim, S, Jeon, CH, Park, JY, Ahn, DC, Kim, GH, Son, Y, Lee, JH, Kim, YT, Ryu, SW & Choi, YK 2017, 'Improved technique for extraction of effective mobility by considering gate bias-dependent inversion charges in a floating-body Si/SiGe pMOSFET', Journal of nanoscience and nanotechnology, vol. 17, no. 5, pp. 3247-3250. https://doi.org/10.1166/jnn.2017.14035

TY - JOUR

T1 - Improved technique for extraction of effective mobility by considering gate bias-dependent inversion charges in a floating-body Si/SiGe pMOSFET

AU - Bae, Hagyoul

AU - Bang, Tewook

AU - Kim, Choong Ki

AU - Hur, Jae

AU - Kim, Seyeob

AU - Jeon, Chang Hoon

AU - Park, Jun Young

AU - Ahn, Dae Chul

AU - Kim, Gun Hee

AU - Son, Yunik

AU - Lee, Jae Hoon

AU - Kim, Yong Taik

AU - Ryu, Seong Wan

AU - Choi, Yang Kyu

PY - 2017

Y1 - 2017

N2 - We report an accurate extraction technique of effective mobility (μeff) by considering gate-bias (VGS)-dependent effective inversion charges (Qinv, eff) as a normalized correction factor (σVGS)) when using the gate-to-source/drain capacitance-voltage (C-V) measurement in a p-channel Si/SiGe MOSFET with a floating body structure. In the proposed technique, two different capacitance-voltage configurations: a gate-to-source/drain (CG-SD) configuration without body contact and a gateto-source/drain/body (CG-SDB) configuration with body contact are utilized for the accurate extraction of μeff.

AB - We report an accurate extraction technique of effective mobility (μeff) by considering gate-bias (VGS)-dependent effective inversion charges (Qinv, eff) as a normalized correction factor (σVGS)) when using the gate-to-source/drain capacitance-voltage (C-V) measurement in a p-channel Si/SiGe MOSFET with a floating body structure. In the proposed technique, two different capacitance-voltage configurations: a gate-to-source/drain (CG-SD) configuration without body contact and a gateto-source/drain/body (CG-SDB) configuration with body contact are utilized for the accurate extraction of μeff.

KW - Effective Inversion Channel

KW - Effective Mobility

KW - Empirical Modeling

KW - SiGe MOSFET

KW - Split C-V Method

UR - https://www.scopus.com/pages/publications/85015329432

U2 - 10.1166/jnn.2017.14035

DO - 10.1166/jnn.2017.14035

M3 - Journal article

AN - SCOPUS:85015329432

SN - 1533-4880

VL - 17

SP - 3247

EP - 3250

JO - Journal of nanoscience and nanotechnology

JF - Journal of nanoscience and nanotechnology

IS - 5

ER -

Improved technique for extraction of effective mobility by considering gate bias-dependent inversion charges in a floating-body Si/SiGe pMOSFET

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Keywords

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