Improvement of Device Performances, Including Electrostatic Discharge Characteristics, of InGaN/GaN Light-Emitting Diodes by Using a Si-Doped Graded Superlattice

Jin Soo Kim

Improvement of Device Performances, Including Electrostatic Discharge Characteristics, of InGaN/GaN Light-Emitting Diodes by Using a Si-Doped Graded Superlattice

Jin Soo Kim

Information Materials Engineering

Research output: Contribution to journal › Journal article › peer-review

Original language	Korean
Journal	Journal of the Korean Physical Society
State	Published - 2017.06.1

Cite this

@article{0158a868cbbf46ce88917c3dd677a1f9,

title = "Improvement of Device Performances, Including Electrostatic Discharge Characteristics, of InGaN/GaN Light-Emitting Diodes by Using a Si-Doped Graded Superlattice",

author = "Kim, \{Jin Soo\}",

year = "2017",

month = jun,

day = "1",

language = "Korean",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

}