@inproceedings{2e575874ff374d84961642977c2199df,
title = "Improvement of thermal stability of nickel silicide using multi-capping structure",
abstract = "In this paper, the electrical properties of NiSi have been characterized using multi capping layer structure for nano CMOS application. We have investigated the formation and thermal stability of Ni silicide using Ni, Ti and TiN capping layers (Ti/Ni/TiN) as a function of Rapid Thermal Processing (RTP) temperature. It was shown that the NiSi with multi capping layer has lower sheet resistances than that with single capping (TiN) layer. NiSi with multi capping layer also showed much better thermal stability. It was verified that the formation Ni-Ti-Si ternary like layer at the top region of thhe NiSi results in improvement of thermal stability.",
keywords = "Multi capping layer, Multi-capping, Salicide, Surface morphology, Thermal stability",
author = "Kim, \{Yong Jin\} and Choi, \{Chel Jong\} and Oh, \{Soon Young\} and Yun, \{Jang Gn\} and Lee, \{Won Jae\} and Ji, \{Hee Hwan\} and Wang, \{Jin Suk\} and Lee, \{Hi Deok\}",
year = "2007",
doi = "10.4028/3-908451-30-2.1261",
language = "English",
isbn = "3908451302",
series = "Solid State Phenomena",
publisher = "Trans Tech Publications Ltd",
number = "PART 2",
pages = "1261--1264",
booktitle = "Nanoscience and Technology",
edition = "PART 2",
note = "China International Conference on Nanoscience and Technology, ChinaNANO 2005 ; Conference date: 09-06-2005 Through 11-06-2005",
}