In-situ monitoring and control of hydrogenated amorphous silicon-germanium band-gap profiling during plasma deposition process

In-situ germanium content monitoring and its characteristics in SiH ₄/GeH₄/H₂ plasmas was studied during hydrogenated amorphous silicon-germanium (a-SiGe:H) film depositions. Since an appropriate band-gap pro filing in a-SiGe:H deposition is very important to achieve high efficiency solar cell, the accurate monitoring and control of Ge contents are required. In this work, we found the spectral intensity ratio of silicon atom (288.2 nm) and germanium atom (303.9 nm) emission has strong relation with Ge content in plasmas. In typical, band-gap energy of films was decreased with the increasing of gas flow ratio GeH₄/SiH₄. However, at different total flow rate of GeH₄, the band-gap was different for same gas flow ratio cases because the Ge content in plasmas was changed due to the changes of electron temperature by hydrogen dilution. On the other hand, the emission intensity ratio Ge/Si detected the band-gap variation. Using this method, therefore, we measured and control Ge/Si to make a U-shape band-gap profile which was proved by an ellipsometer and Auger electron spectroscopy depth profile analysis.