In-surfactant time dependent properties of InGaN/GaN multiple quantum-wells grown by using MOCVD

The In-surfactant time-dependent properties were studied for InGaN/GaN multiple-quantum-well (MQW) structures grown by using metalorganic chemical vapor deposition (MOCVD). The structural properties of the InGaN/GaN MQWs were investigated by using high-resolution X-ray diffraction (HRXRD). For the InGaN/GaN MQWs, an increase in compressive strain was observed with increasing surfactant time from an analysis of the satellite peaks in the HRXRD. The peaks observed in the photocurrent spectra were preliminarily assigned to electron-heavy hole (e₁-hh) and electron-light hole (e ₁-lh) fundamental excitionic transitions. The photoluminescence and the photocurrent peaks were red-shifted with increasing surfactant time.