Inductively Coupled Ai/CC12F4/C12 plasma etching of Ge

T. S. Kim; S. S. Choi; T. S. Jeong; S. Kang; K. H. Shim

doi:10.1149/1.2986759

Inductively Coupled Ai/CC1₂F₄/C1₂ plasma etching of Ge

T. S. Kim
, S. S. Choi
, T. S. Jeong
, S. Kang
, K. H. Shim

Jeonbuk National University

Research output: Contribution to conference › Conference paper › peer-review

1 Scopus citations

Abstract

We have investigated the etch rates and the angle subtended for Ge as a function of varied Inductively Coupled Plasma (ICP) power, CC1₂F ₂ flow, and Cl₂ flow. The etch rate of Ge increases from 374 to 520 Å/min as ICP power increases from 400 to 700 W, whereas the etching rate of Ge decreases from 524 to 400 Å/min as CC1 ₂F₂ flow increases from 40 to 80 seem, respectively. Also, the etching rate of Ge decreases from 467 to 400 Å/min as Cl₂ flow increases from 0 to 20 seem. As ICP power increases the angle subtended also increases. From the SEM photographs it appears that Ar/CC1 ₂F₂ /Cl₂ ICP etching causes the presence of carbon-based material in the form of large particles.

Original language	English
Title of host publication	ECS Transactions - SiGe, Ge, and Related Compounds 3
Subtitle of host publication	Materials, Processing, and Devices
Publisher	Electrochemical Society Inc.
Pages	127-133
Number of pages	7
Edition	10
ISBN (Print)	9781566776561
DOIs	https://doi.org/10.1149/1.2986759
State	Published - 2009
Event	3rd SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 214th ECS Meeting - Honolulu, HI, United States Duration: 2008.10.12 → 2008.10.17

Publication series

Name	ECS Transactions
Number	10
Volume	16
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	3rd SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 214th ECS Meeting
Country/Territory	United States
City	Honolulu, HI
Period	08.10.12 → 08.10.17

Quacquarelli Symonds(QS) Subject Topics

Engineering & Technology

Access to Document

10.1149/1.2986759

Cite this

@inproceedings{e5c7662f82a14224a0b44567556958e6,

title = "Inductively Coupled Ai/CC12F4/C12 plasma etching of Ge",

abstract = "We have investigated the etch rates and the angle subtended for Ge as a function of varied Inductively Coupled Plasma (ICP) power, CC12F 2 flow, and Cl2 flow. The etch rate of Ge increases from 374 to 520 {\AA}/min as ICP power increases from 400 to 700 W, whereas the etching rate of Ge decreases from 524 to 400 {\AA}/min as CC1 2F2 flow increases from 40 to 80 seem, respectively. Also, the etching rate of Ge decreases from 467 to 400 {\AA}/min as Cl2 flow increases from 0 to 20 seem. As ICP power increases the angle subtended also increases. From the SEM photographs it appears that Ar/CC1 2F2 /Cl2 ICP etching causes the presence of carbon-based material in the form of large particles.",

author = "Kim, \{T. S.\} and Choi, \{S. S.\} and Jeong, \{T. S.\} and S. Kang and Shim, \{K. H.\}",

year = "2009",

doi = "10.1149/1.2986759",

language = "English",

isbn = "9781566776561",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "10",

pages = "127--133",

booktitle = "ECS Transactions - SiGe, Ge, and Related Compounds 3",

edition = "10",

note = "3rd SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 214th ECS Meeting ; Conference date: 12-10-2008 Through 17-10-2008",

}

Kim, TS, Choi, SS, Jeong, TS, Kang, S & Shim, KH 2009, Inductively Coupled Ai/CC1₂F₄/C1₂ plasma etching of Ge. in ECS Transactions - SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices. 10 edn, ECS Transactions, no. 10, vol. 16, Electrochemical Society Inc., pp. 127-133, 3rd SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 214th ECS Meeting, Honolulu, HI, United States, 08.10.12. https://doi.org/10.1149/1.2986759

TY - GEN

T1 - Inductively Coupled Ai/CC12F4/C12 plasma etching of Ge

AU - Kim, T. S.

AU - Choi, S. S.

AU - Jeong, T. S.

AU - Kang, S.

AU - Shim, K. H.

PY - 2009

Y1 - 2009

N2 - We have investigated the etch rates and the angle subtended for Ge as a function of varied Inductively Coupled Plasma (ICP) power, CC12F 2 flow, and Cl2 flow. The etch rate of Ge increases from 374 to 520 Å/min as ICP power increases from 400 to 700 W, whereas the etching rate of Ge decreases from 524 to 400 Å/min as CC1 2F2 flow increases from 40 to 80 seem, respectively. Also, the etching rate of Ge decreases from 467 to 400 Å/min as Cl2 flow increases from 0 to 20 seem. As ICP power increases the angle subtended also increases. From the SEM photographs it appears that Ar/CC1 2F2 /Cl2 ICP etching causes the presence of carbon-based material in the form of large particles.

AB - We have investigated the etch rates and the angle subtended for Ge as a function of varied Inductively Coupled Plasma (ICP) power, CC12F 2 flow, and Cl2 flow. The etch rate of Ge increases from 374 to 520 Å/min as ICP power increases from 400 to 700 W, whereas the etching rate of Ge decreases from 524 to 400 Å/min as CC1 2F2 flow increases from 40 to 80 seem, respectively. Also, the etching rate of Ge decreases from 467 to 400 Å/min as Cl2 flow increases from 0 to 20 seem. As ICP power increases the angle subtended also increases. From the SEM photographs it appears that Ar/CC1 2F2 /Cl2 ICP etching causes the presence of carbon-based material in the form of large particles.

UR - https://www.scopus.com/pages/publications/63149120469

U2 - 10.1149/1.2986759

DO - 10.1149/1.2986759

M3 - Conference paper

AN - SCOPUS:63149120469

SN - 9781566776561

T3 - ECS Transactions

SP - 127

EP - 133

BT - ECS Transactions - SiGe, Ge, and Related Compounds 3

PB - Electrochemical Society Inc.

T2 - 3rd SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 214th ECS Meeting

Y2 - 12 October 2008 through 17 October 2008

ER -