Abstract
The spatio-temporal evolution of silicon particles has been investigated by using a laser light scattering method in a static and/or modulated magnetic field. If the crossed static magnetic field is applied at the same time as the discharge starts, then the appearance times of the Mie scattering intensity by silicon particles become later with increasing applied magnetic flux density and the density of silicon particles decreases with increasing applied magnetic flux density. If the modulated magnetic field is applied, the particle density decreases more than in the case of static applied magnetic field; however, the appearance time of silicon particles has an optimum frequency for the discharge condition. Finally, it is considered that the fluctuation of discharge current in the presence of a modulated magnetic field is caused by the effects of both generation of silicon particles in the discharge space and the deposition of a-Si:H thin film on the cathode surface.
| Original language | English |
|---|---|
| Pages (from-to) | 366-371 |
| Number of pages | 6 |
| Journal | Surface and Coatings Technology |
| Volume | 97 |
| Issue number | 1-3 |
| DOIs | |
| State | Published - 1997.12 |
Keywords
- Fluctuation of discharge current
- Modulated magnetic field
- Silicon particle
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