Influence of interference on extraction efficiency of ultraviolet vertical light-emitting diodes

Seung Hwan Kim; Young Ho Song; Seong Ran Jeon; Gye Mo Yang; Jun Seok Ha; Sang Hern Lee; Jong Hyeob Baek; Hyung Jo Park

doi:10.1007/s11664-013-2611-2

Influence of interference on extraction efficiency of ultraviolet vertical light-emitting diodes

Seung Hwan Kim
, Young Ho Song
, Seong Ran Jeon
, Gye Mo Yang
, Jun Seok Ha
, Sang Hern Lee
, Jong Hyeob Baek
, Hyung Jo Park

Department of Semiconductor Science and Technology

Research output: Contribution to journal › Journal article › peer-review

4 Scopus citations

Abstract

We report on enhanced efficiency of ultraviolet vertical light-emitting diodes (VLEDs) with interference between the reflective mirror and the multiple quantum well. The dimensions of the cavity are fixed at 30 nm for the p-AlGaN layer, while various thicknesses of p-GaN from 60 nm to 140 nm were used. The light output power of the VLED in constructive compared with destructive interference condition increased by 23.9% at 350 mA. These improvements could be attributed to the predominant constructive interference of vertical radiation due to an optical cavity with optimal p-GaN thickness.

Original language	English
Pages (from-to)	2435-2438
Number of pages	4
Journal	Journal of Electronic Materials
Volume	42
Issue number	8
DOIs	https://doi.org/10.1007/s11664-013-2611-2
State	Published - 2013.08

Keywords

extraction efficiency
interference
three-dimensional finite-difference time-domain (3D-FDTD)
Vertical light-emitting diodes

Quacquarelli Symonds(QS) Subject Topics

Materials Science
Engineering - Electrical & Electronic
Engineering - Petroleum
Physics & Astronomy

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10.1007/s11664-013-2611-2

Cite this

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title = "Influence of interference on extraction efficiency of ultraviolet vertical light-emitting diodes",

abstract = "We report on enhanced efficiency of ultraviolet vertical light-emitting diodes (VLEDs) with interference between the reflective mirror and the multiple quantum well. The dimensions of the cavity are fixed at 30 nm for the p-AlGaN layer, while various thicknesses of p-GaN from 60 nm to 140 nm were used. The light output power of the VLED in constructive compared with destructive interference condition increased by 23.9\% at 350 mA. These improvements could be attributed to the predominant constructive interference of vertical radiation due to an optical cavity with optimal p-GaN thickness.",

keywords = "extraction efficiency, interference, three-dimensional finite-difference time-domain (3D-FDTD), Vertical light-emitting diodes",

author = "Kim, \{Seung Hwan\} and Song, \{Young Ho\} and Jeon, \{Seong Ran\} and Yang, \{Gye Mo\} and Ha, \{Jun Seok\} and Lee, \{Sang Hern\} and Baek, \{Jong Hyeob\} and Park, \{Hyung Jo\}",

year = "2013",

month = aug,

doi = "10.1007/s11664-013-2611-2",

language = "English",

volume = "42",

pages = "2435--2438",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

number = "8",

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TY - JOUR

T1 - Influence of interference on extraction efficiency of ultraviolet vertical light-emitting diodes

AU - Kim, Seung Hwan

AU - Song, Young Ho

AU - Jeon, Seong Ran

AU - Yang, Gye Mo

AU - Ha, Jun Seok

AU - Lee, Sang Hern

AU - Baek, Jong Hyeob

AU - Park, Hyung Jo

PY - 2013/8

Y1 - 2013/8

N2 - We report on enhanced efficiency of ultraviolet vertical light-emitting diodes (VLEDs) with interference between the reflective mirror and the multiple quantum well. The dimensions of the cavity are fixed at 30 nm for the p-AlGaN layer, while various thicknesses of p-GaN from 60 nm to 140 nm were used. The light output power of the VLED in constructive compared with destructive interference condition increased by 23.9% at 350 mA. These improvements could be attributed to the predominant constructive interference of vertical radiation due to an optical cavity with optimal p-GaN thickness.

AB - We report on enhanced efficiency of ultraviolet vertical light-emitting diodes (VLEDs) with interference between the reflective mirror and the multiple quantum well. The dimensions of the cavity are fixed at 30 nm for the p-AlGaN layer, while various thicknesses of p-GaN from 60 nm to 140 nm were used. The light output power of the VLED in constructive compared with destructive interference condition increased by 23.9% at 350 mA. These improvements could be attributed to the predominant constructive interference of vertical radiation due to an optical cavity with optimal p-GaN thickness.

KW - extraction efficiency

KW - interference

KW - three-dimensional finite-difference time-domain (3D-FDTD)

KW - Vertical light-emitting diodes

UR - https://www.scopus.com/pages/publications/84880924494

U2 - 10.1007/s11664-013-2611-2

DO - 10.1007/s11664-013-2611-2

M3 - Journal article

AN - SCOPUS:84880924494

SN - 0361-5235

VL - 42

SP - 2435

EP - 2438

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 8

ER -

Influence of interference on extraction efficiency of ultraviolet vertical light-emitting diodes

Abstract

Keywords

Quacquarelli Symonds(QS) Subject Topics

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