Abstract
The influence of mirror reflectivity on laser performance of InGaAs–GaAs vertical-cavity surface-emitting lasers fabricated by selective oxidation is investigated by the stepwise change of the number of pairs in top mirror stack after device fabrication. Devices with 18-pair stacks in the top mirror, which is the optimized number of pairs in this structure, show an output power over 1.9 mW and a slope efficiency of 55% while maintaining a low threshold current of 212 µA. The analysis of the threshold current and differential efficiency related to mirror reflectivity shows an internal quantum efficiency of 95 %, an internal round-trip loss of 0.07 %, and a transparency current density of 71 A/cm2.
| Original language | English |
|---|---|
| Pages (from-to) | 1228-1230 |
| Number of pages | 3 |
| Journal | IEEE Photonics Technology Letters |
| Volume | 7 |
| Issue number | 11 |
| DOIs | |
| State | Published - 1995.11 |
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