Influence of mobile space charges on electrical properties of ferroelectric Bi3.5La0.5Ti3O12 thin films

S. D. Bu

doi:10.1016/j.ssc.2004.12.039

Influence of mobile space charges on electrical properties of ferroelectric Bi_3.5La_0.5Ti₃O₁₂ thin films

S. D. Bu^*

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Journal article › peer-review

3 Scopus citations

Abstract

Lanthanum-substituted bismuth titanate, Bi_3.5La _0.5Ti₃O₁₂ (i.e., x=0.5 in Bi _4-xLa_xTi₃O₁₂), thin films have been grown on Pt/Ti/SiO₂/Si substrates using pulsed laser deposition. The frequency dependence of the real part ε′(ω) and the imaginary part ε″(ω) of the dielectric constant has been studied. The ε′(ω) does not show any sudden change within the frequency range of 10²-10⁶ Hz. In contrast, the ε″ (ω) shows a large dispersion as frequency decreases. The observed relaxation behavior in ε″(ω) can be explained in terms of a migration of oxygen vacancies in (Bi₂O₂)²⁺ layers, not in Bi₂Ti₃O₁₀ perovskite layers.

Original language	English
Pages (from-to)	671-674
Number of pages	4
Journal	Solid State Communications
Volume	133
Issue number	10
DOIs	https://doi.org/10.1016/j.ssc.2004.12.039
State	Published - 2005.03

Keywords

A. Ferroelectrics
A. Thin films
D. Dielectric response

Quacquarelli Symonds(QS) Subject Topics

Materials Science
Chemistry
Physics & Astronomy

Access to Document

10.1016/j.ssc.2004.12.039

Cite this

@article{7ffe5e1ee3864589b89556a0ba2330fb,

title = "Influence of mobile space charges on electrical properties of ferroelectric Bi3.5La0.5Ti3O12 thin films",

abstract = "Lanthanum-substituted bismuth titanate, Bi3.5La 0.5Ti3O12 (i.e., x=0.5 in Bi 4-xLaxTi3O12), thin films have been grown on Pt/Ti/SiO2/Si substrates using pulsed laser deposition. The frequency dependence of the real part ε′(ω) and the imaginary part ε″(ω) of the dielectric constant has been studied. The ε′(ω) does not show any sudden change within the frequency range of 102-106 Hz. In contrast, the ε″ (ω) shows a large dispersion as frequency decreases. The observed relaxation behavior in ε″(ω) can be explained in terms of a migration of oxygen vacancies in (Bi2O2)2+ layers, not in Bi2Ti3O10 perovskite layers.",

keywords = "A. Ferroelectrics, A. Thin films, D. Dielectric response",

author = "Bu, \{S. D.\}",

year = "2005",

month = mar,

doi = "10.1016/j.ssc.2004.12.039",

language = "English",

volume = "133",

pages = "671--674",

journal = "Solid State Communications",

issn = "0038-1098",

number = "10",

}

TY - JOUR

T1 - Influence of mobile space charges on electrical properties of ferroelectric Bi3.5La0.5Ti3O12 thin films

AU - Bu, S. D.

PY - 2005/3

Y1 - 2005/3

N2 - Lanthanum-substituted bismuth titanate, Bi3.5La 0.5Ti3O12 (i.e., x=0.5 in Bi 4-xLaxTi3O12), thin films have been grown on Pt/Ti/SiO2/Si substrates using pulsed laser deposition. The frequency dependence of the real part ε′(ω) and the imaginary part ε″(ω) of the dielectric constant has been studied. The ε′(ω) does not show any sudden change within the frequency range of 102-106 Hz. In contrast, the ε″ (ω) shows a large dispersion as frequency decreases. The observed relaxation behavior in ε″(ω) can be explained in terms of a migration of oxygen vacancies in (Bi2O2)2+ layers, not in Bi2Ti3O10 perovskite layers.

AB - Lanthanum-substituted bismuth titanate, Bi3.5La 0.5Ti3O12 (i.e., x=0.5 in Bi 4-xLaxTi3O12), thin films have been grown on Pt/Ti/SiO2/Si substrates using pulsed laser deposition. The frequency dependence of the real part ε′(ω) and the imaginary part ε″(ω) of the dielectric constant has been studied. The ε′(ω) does not show any sudden change within the frequency range of 102-106 Hz. In contrast, the ε″ (ω) shows a large dispersion as frequency decreases. The observed relaxation behavior in ε″(ω) can be explained in terms of a migration of oxygen vacancies in (Bi2O2)2+ layers, not in Bi2Ti3O10 perovskite layers.

KW - A. Ferroelectrics

KW - A. Thin films

KW - D. Dielectric response

UR - https://www.scopus.com/pages/publications/13544265310

U2 - 10.1016/j.ssc.2004.12.039

DO - 10.1016/j.ssc.2004.12.039

M3 - Journal article

AN - SCOPUS:13544265310

SN - 0038-1098

VL - 133

SP - 671

EP - 674

JO - Solid State Communications

JF - Solid State Communications

IS - 10

ER -