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Influence of oxygen vacancies on the electronic structure of Hf O2 films

  • Deok Yong Cho
  • , Jae Min Lee
  • , S. J. Oh*
  • , Hoyoung Jang
  • , J. Y. Kim
  • , J. H. Park
  • , A. Tanaka
  • *Corresponding author for this work
  • Seoul National University
  • Pohang University of Science and Technology
  • Hiroshima University

Research output: Contribution to journalJournal articlepeer-review

Abstract

We investigated the unoccupied part of the electronic structure of the oxygen-deficient hafnium oxide (Hf O∼1.8) using soft x-ray absorption spectroscopy at O K and Hf N3 edges. Band-tail states beneath the unoccupied Hf 5d band are observed in the O K -edge spectra. Combined with ultraviolet photoemission spectrum, this indicates the non-negligible occupation of the Hf 5d state. However, Hf N3 -edge magnetic circular dichroism spectrum reveals the absence of a long-range ferromagnetic spin order in the oxide. Thus, the small amount of d electron gained by the vacancy formation does not show intersite correlation, contrary to a recent paper.

Original languageEnglish
Article number165411
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume76
Issue number16
DOIs
StatePublished - 2007.10.9

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