@inproceedings{bdfd6762912f417783563b62a2553400,
title = "Influence of post-annealing on properties of α-Ga2O3 epilayer grown by halide vapor phase epitaxy",
abstract = "Effect of annealing to realize high-quality α-Ga2O3 epilayers grown by halide vapor phase epitaxy has been studied. The structural and optical properties of α-Ga2O3 changed with changing annealing duration. In particular, for an annealing duration of 3 min, the crystal quality improved from 51 and 2757 arcsec to 28 and 1539 arcsec for (0006) and (10-14) FWHM, respectively. X-ray photoelectron spectroscopy results confirmed that the oxygen gas during annealing reacted to compensate the oxygen vacancies in the α-Ga2O3 epilayers. These results show that the optimized thermal annealing improved the crystal quality of α-Ga2O3 epilayers.",
keywords = "annealing, HVPE, α-GaO",
author = "Hoki Son and Choi, \{Ye Ji\} and Ra, \{Yong Ho\} and Lee, \{Young Jin\} and Kim, \{Jin Ho\} and Kim, \{Sun Woog\} and Lim, \{Tae Young\} and Jonghee Hwang and Jeon, \{Dae Woo\}",
note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 Compound Semiconductor Week, CSW 2019 ; Conference date: 19-05-2019 Through 23-05-2019",
year = "2019",
month = may,
doi = "10.1109/ICIPRM.2019.8819074",
language = "English",
series = "2019 Compound Semiconductor Week, CSW 2019 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2019 Compound Semiconductor Week, CSW 2019 - Proceedings",
}