Influence of SiN buffer layer in GaN epilayers

GaN epilayers were grown on GaN/SiN double buffer layers by metalorganic chemical vapor deposition. The GaN epilayers grown on the GaN/SiN buffer showed some improvement in structural and optical properties. The SiN buffer layers were found to be porous with many nanometer-sized holes. It was suggested that dislocations which were responsible for deep levels were reduced in the GaN on the porous SiN buffer layer.