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Influence of substrate temperature and O2 flow on the properties of RF-magnetron-sputtered indium-tin-oxide thin films

  • T. S. Kim*
  • , C. H. Choi
  • , T. S. Jeong
  • , K. H. Shim
  • *Corresponding author for this work
  • Jeonbuk National University

Research output: Contribution to journalJournal articlepeer-review

Abstract

Indium tin oxide (ITO) thin films have been deposited onto glass substrates by using RF magnetron sputtering at different substrate temperatures and at various oxygen (O2) now rates. X-ray diffraction (XRD), atomic force microscopy (AFM), UV-Vis spectroscopy and four-point probe techniques were used to investigate the structural, the surface morphological, the optical, and the electrical properties of the prepared films respectively. An increase in grain size and a decrease in surface roughness were observed for ITO films with increasing in O2 flow rate and substrate temperature. The absorption band edge was found to shift towards the short- wavelength region with increasing of O2 flow rate and with decrease of substrate temperature. The surface resistance was found to decrease with the increasing substrate temperature at a constant O2 flow rate and to increase with increasing O2 flow rate in the temperature range studied.

Original languageEnglish
Pages (from-to)534-538
Number of pages5
JournalJournal of the Korean Physical Society
Volume51
Issue number2
DOIs
StatePublished - 2007.08

Keywords

  • Indium tin oxide
  • Sputtering
  • Thin film
  • Transparent

Quacquarelli Symonds(QS) Subject Topics

  • Physics & Astronomy

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