Influence of surface morphology on adsorption behavior in zno nanowire field-effect transistors

We fabricated field-effect transistors (FETs) using ZnO nanowires with different structures and studied the effect of the adsorption of gas molecules on the electrical properties of the obtained nanowire devices. Although they were grown on the same substrate and under the same synthesis conditions, the devices showed completely different adsorption behaviors, depending on their surface structures. Some FETs underwent oxidative adsorption reactions whereas others underwent reductive adsorption in ambient air. In addition to these differences in adsorption behavior, our experimental results show that the electron mobilities in the ZnO nanowire devices are also closely related to their surface structure.