Influence of the laser fluence on the electrical properties of pulsed-laser-deposited SrBi2Ta2O9 thin films

S. D. Bu; B. H. Park; B. S. Kang; S. H. Kang; T. W. Noh; W. Jo

doi:10.1063/1.124627

Influence of the laser fluence on the electrical properties of pulsed-laser-deposited SrBi₂Ta₂O₉ thin films

S. D. Bu^*
, B. H. Park
, B. S. Kang
, S. H. Kang
, T. W. Noh
, W. Jo

^*Corresponding author for this work

Department of Physics

Seoul National University
LG Corporation

Research output: Contribution to journal › Journal article › peer-review

32 Scopus citations

Abstract

The electrical properties and microstructure of the pulsed-laser deposited SrBi₂Ta₂O₉ (SBT) ferroelectric thin films were studied as a function of the laser fluence. The thin films were deposited on Pt/Ti/SiO₂/Si substrates using a Q-switched Nd:YAG laser. SBT films with good electrical properties were obtained in a narrow laser fluence ranging from 1.0-1.5 J/cm².

Original language	English
Pages (from-to)	1155-1157
Number of pages	3
Journal	Applied Physics Letters
Volume	75
Issue number	8
DOIs	https://doi.org/10.1063/1.124627
State	Published - 1999.08.23

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title = "Influence of the laser fluence on the electrical properties of pulsed-laser-deposited SrBi2Ta2O9 thin films",

abstract = "The electrical properties and microstructure of the pulsed-laser deposited SrBi2Ta2O9 (SBT) ferroelectric thin films were studied as a function of the laser fluence. The thin films were deposited on Pt/Ti/SiO2/Si substrates using a Q-switched Nd:YAG laser. SBT films with good electrical properties were obtained in a narrow laser fluence ranging from 1.0-1.5 J/cm2.",

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AU - Bu, S. D.

AU - Park, B. H.

AU - Kang, B. S.

AU - Kang, S. H.

AU - Noh, T. W.

AU - Jo, W.

PY - 1999/8/23

Y1 - 1999/8/23

N2 - The electrical properties and microstructure of the pulsed-laser deposited SrBi2Ta2O9 (SBT) ferroelectric thin films were studied as a function of the laser fluence. The thin films were deposited on Pt/Ti/SiO2/Si substrates using a Q-switched Nd:YAG laser. SBT films with good electrical properties were obtained in a narrow laser fluence ranging from 1.0-1.5 J/cm2.

AB - The electrical properties and microstructure of the pulsed-laser deposited SrBi2Ta2O9 (SBT) ferroelectric thin films were studied as a function of the laser fluence. The thin films were deposited on Pt/Ti/SiO2/Si substrates using a Q-switched Nd:YAG laser. SBT films with good electrical properties were obtained in a narrow laser fluence ranging from 1.0-1.5 J/cm2.

UR - https://www.scopus.com/pages/publications/0032621305

U2 - 10.1063/1.124627

DO - 10.1063/1.124627

M3 - Journal article

AN - SCOPUS:0032621305

SN - 0003-6951

VL - 75

SP - 1155

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

ER -

Influence of the laser fluence on the electrical properties of pulsed-laser-deposited SrBi₂Ta₂O₉ thin films

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