@inproceedings{e54ee65240ee4d10be9da1053318ed74,
title = "Influence of thermal annealing on initial Zn layers and the properties of ZnO thin films grown by PA-MBE",
abstract = "ZnO thin films were grown on p-type Si (100) by plasma-assisted molecular beam epitaxy (PA-MBE). Before the growth of the ZnO thin films, the initial Zn layers were deposited on the Si substrates. In order to investigate the effects of thermal annealing, the initial Zn layers were annealed at the temperature range from 500 to 700°C for 30 min under oxygen ambient. The properties of the ZnO thin films with annealed initial Zn layers have been investigated by X-ray diffraction (XRD), room temperature (RT) photoluminescence (PL), and scanning electron microscopy (SEM).",
keywords = "Molecular beam epitaxy, Photoluminescence, Scanning electron microscopy, Zinc oxide",
author = "Cho, \{M. Y.\} and Kim, \{H. G.\} and Jeon, \{S. M.\} and Kim, \{G. S.\} and Choi, \{H. Y.\} and Yim, \{K. G.\} and Kim, \{M. S.\} and Lee, \{D. Y.\} and Kim, \{J. S.\} and Kim, \{J. S.\} and Eom, \{G. S.\} and Lee, \{J. I.\} and Leem, \{J. Y.\}",
year = "2011",
doi = "10.1063/1.3666308",
language = "English",
isbn = "9780735410022",
series = "AIP Conference Proceedings",
pages = "165--166",
booktitle = "Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30",
note = "30th International Conference on the Physics of Semiconductors, ICPS-30 ; Conference date: 25-07-2010 Through 30-07-2010",
}