TY - GEN
T1 - InGaN nanowire integrated nanophotonics
AU - Mi, Zetian
AU - Ra, Yong Ho
AU - Rashid, Roksana
AU - Wang, Renjie
AU - Shih, Ishiang
N1 - Publisher Copyright:
© 2017 IEEE.
PY - 2017/8/17
Y1 - 2017/8/17
N2 - A monolithic integrated photonic platform is essentially required for a broad range of applications, including optical interconnect, quantum information processing, lighting, display, and sensing. To date, however, a ubiquitous platform for photonic integration has remained elusive. While Si photonics has been extensively studied, it has several serious shortcomings [1], including optical absorption in the ultraviolet, visible and telecom wavelengths range, and lack of second order nonlinearity. Moreover, due to the indirect bandgap of Si, a practical Si-based electrically injected laser has not been possible. These critical challenges can be readily addressed by developing a GaN-based integrated photonic platform. GaN has a direct energy bandgap of 3.4 eV and can be further tuned from 6.2 eV to 0.65 eV through alloying with In and Al, which enables a broad range of active photonic devices, including light emitting diodes (LEDs), lasers, and photodetectors operating in the deep ultraviolet (UV), visible and near-infrared spectral range. GaN exhibits strong second order nonlinearity, and the χ(2) coefficient is on the same order as LiNbOs [2, 3]. GaN has excellent thermal, electrical and optoelectronic properties, and possess outstanding potential for both linear, nonlinear, and quantum optical applications. Moreover, GaN has a wide transparency window, from ∼ 0.36 μm to 13.6 μm [4]. To date, however, the extraordinary potential of GaN-based materials for integrated photonics has been severely limited by the presence of large densities of defects and dislocations in conventional GaN planar heterostructures. In this context, we propose to develop a GaN nanowire based platform for integrated nanophotonics, which can be monolithically integrated on Si and other foreign substrates and are nearly free of dislocations. We have demonstrated the epitaxy of InGaN nanostructures with controlled shape, composition, and morphology, which will serve as the building block for the emerging GaN integrated nanophotonics.
AB - A monolithic integrated photonic platform is essentially required for a broad range of applications, including optical interconnect, quantum information processing, lighting, display, and sensing. To date, however, a ubiquitous platform for photonic integration has remained elusive. While Si photonics has been extensively studied, it has several serious shortcomings [1], including optical absorption in the ultraviolet, visible and telecom wavelengths range, and lack of second order nonlinearity. Moreover, due to the indirect bandgap of Si, a practical Si-based electrically injected laser has not been possible. These critical challenges can be readily addressed by developing a GaN-based integrated photonic platform. GaN has a direct energy bandgap of 3.4 eV and can be further tuned from 6.2 eV to 0.65 eV through alloying with In and Al, which enables a broad range of active photonic devices, including light emitting diodes (LEDs), lasers, and photodetectors operating in the deep ultraviolet (UV), visible and near-infrared spectral range. GaN exhibits strong second order nonlinearity, and the χ(2) coefficient is on the same order as LiNbOs [2, 3]. GaN has excellent thermal, electrical and optoelectronic properties, and possess outstanding potential for both linear, nonlinear, and quantum optical applications. Moreover, GaN has a wide transparency window, from ∼ 0.36 μm to 13.6 μm [4]. To date, however, the extraordinary potential of GaN-based materials for integrated photonics has been severely limited by the presence of large densities of defects and dislocations in conventional GaN planar heterostructures. In this context, we propose to develop a GaN nanowire based platform for integrated nanophotonics, which can be monolithically integrated on Si and other foreign substrates and are nearly free of dislocations. We have demonstrated the epitaxy of InGaN nanostructures with controlled shape, composition, and morphology, which will serve as the building block for the emerging GaN integrated nanophotonics.
UR - https://www.scopus.com/pages/publications/85029376534
U2 - 10.1109/PHOSST.2017.8012688
DO - 10.1109/PHOSST.2017.8012688
M3 - Conference paper
AN - SCOPUS:85029376534
T3 - Summer Topicals Meeting Series, SUM 2017
SP - 137
EP - 138
BT - Summer Topicals Meeting Series, SUM 2017
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2017 IEEE Photonics Society Summer Topicals Meeting Series, SUM 2017
Y2 - 10 July 2017 through 12 July 2017
ER -