InGaN/GaN multi-quantum well distributed Bragg reflector laser diode

Jaehee Cho; S. Cho; B. J. Kim; S. Chae; C. Sone; O. H. Nam; J. W. Lee; Y. Park; T. I. Kim

doi:10.1063/1.126072

InGaN/GaN multi-quantum well distributed Bragg reflector laser diode

Jaehee Cho^*
, S. Cho
, B. J. Kim
, S. Chae
, C. Sone
, O. H. Nam
, J. W. Lee
, Y. Park
, T. I. Kim

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Samsung

Research output: Contribution to journal › Journal article › peer-review

23 Scopus citations

Abstract

An electrically injected InGaN/GaN-based distributed Bragg reflector (DBR) laser was demonstrated. Surface grating was formed on both sides of ridge waveguide by chemically assisted ion beam etching technique. The observed threshold current was 375 mA with threshold voltage of 15.1 V for 500 X 3 μm² devices. The emission of the DBR laser occurred in a single longitudinal mode at a wavelength of 401.3 nm. The ratio of sidemode suppression was found to be more than 13 dB until a current injection of 1 A.

Original language	English
Pages (from-to)	1489-1491
Number of pages	3
Journal	Applied Physics Letters
Volume	76
Issue number	12
DOIs	https://doi.org/10.1063/1.126072
State	Published - 2000.03.20

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10.1063/1.126072

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@article{c394d1c9388c43a2be6d889b92dfaa80,

title = "InGaN/GaN multi-quantum well distributed Bragg reflector laser diode",

abstract = "An electrically injected InGaN/GaN-based distributed Bragg reflector (DBR) laser was demonstrated. Surface grating was formed on both sides of ridge waveguide by chemically assisted ion beam etching technique. The observed threshold current was 375 mA with threshold voltage of 15.1 V for 500 X 3 μm2 devices. The emission of the DBR laser occurred in a single longitudinal mode at a wavelength of 401.3 nm. The ratio of sidemode suppression was found to be more than 13 dB until a current injection of 1 A.",

author = "Jaehee Cho and S. Cho and Kim, \{B. J.\} and S. Chae and C. Sone and Nam, \{O. H.\} and Lee, \{J. W.\} and Y. Park and Kim, \{T. I.\}",

year = "2000",

month = mar,

day = "20",

doi = "10.1063/1.126072",

language = "English",

volume = "76",

pages = "1489--1491",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "12",

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TY - JOUR

T1 - InGaN/GaN multi-quantum well distributed Bragg reflector laser diode

AU - Cho, Jaehee

AU - Cho, S.

AU - Kim, B. J.

AU - Chae, S.

AU - Sone, C.

AU - Nam, O. H.

AU - Lee, J. W.

AU - Park, Y.

AU - Kim, T. I.

PY - 2000/3/20

Y1 - 2000/3/20

N2 - An electrically injected InGaN/GaN-based distributed Bragg reflector (DBR) laser was demonstrated. Surface grating was formed on both sides of ridge waveguide by chemically assisted ion beam etching technique. The observed threshold current was 375 mA with threshold voltage of 15.1 V for 500 X 3 μm2 devices. The emission of the DBR laser occurred in a single longitudinal mode at a wavelength of 401.3 nm. The ratio of sidemode suppression was found to be more than 13 dB until a current injection of 1 A.

AB - An electrically injected InGaN/GaN-based distributed Bragg reflector (DBR) laser was demonstrated. Surface grating was formed on both sides of ridge waveguide by chemically assisted ion beam etching technique. The observed threshold current was 375 mA with threshold voltage of 15.1 V for 500 X 3 μm2 devices. The emission of the DBR laser occurred in a single longitudinal mode at a wavelength of 401.3 nm. The ratio of sidemode suppression was found to be more than 13 dB until a current injection of 1 A.

UR - https://www.scopus.com/pages/publications/0001733162

U2 - 10.1063/1.126072

DO - 10.1063/1.126072

M3 - Journal article

AN - SCOPUS:0001733162

SN - 0003-6951

VL - 76

SP - 1489

EP - 1491

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

ER -

InGaN/GaN multi-quantum well distributed Bragg reflector laser diode

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