Inner sidewall gate MOSFET with HfO2 gate dielectric and Pt electrode

Kiju Im; Chang Geun Ahn; Jong Heon Yang; In Bok Back; Chel Jong Choi; Seongjae Lee; Hyunsang Hwang; Won Ju Cho

Inner sidewall gate MOSFET with HfO₂ gate dielectric and Pt electrode

Kiju Im^*
, Chang Geun Ahn
, Jong Heon Yang
, In Bok Back
, Chel Jong Choi
, Seongjae Lee
, Hyunsang Hwang
, Won Ju Cho

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Electronics and Telecommunications Research Institute
Gwangju Institute of Science and Technology
Kwangwoon University

Research output: Conference(x) › Paper › peer-review

Abstract

Ultra thin body (UTB) inner sidewall gate (ISG) MOSFET employed by HfO ₂ gate dielectric and Pt electrode with gate length of 60 nm will be described. In ISG MOSFET, because high temperature source drain activation process is performed followed by gate stack, like replacement gate process, the gate stack materials have little chance of degradation from high temperature process. Considering the gate length of 60 nm, the fabricated ISG MOSFET shows good electrical characteristics, DIBL of 81mV/V, and SS of 79 mV/dec.

Original language	English
Pages	24-27
Number of pages	4
State	Published - 2006
Event	2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings - Boston, MA, United States Duration: 2006.05.7 → 2006.05.11

Conference

Conference	2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings
Country/Territory	United States
City	Boston, MA
Period	06.05.7 → 06.05.11

Keywords

High-k
Metal gate
MOSFET
SOI
Ultra thin body

Cite this

@conference{a18d09c734a44adba4a04bd5410441b0,

title = "Inner sidewall gate MOSFET with HfO2 gate dielectric and Pt electrode",

abstract = "Ultra thin body (UTB) inner sidewall gate (ISG) MOSFET employed by HfO 2 gate dielectric and Pt electrode with gate length of 60 nm will be described. In ISG MOSFET, because high temperature source drain activation process is performed followed by gate stack, like replacement gate process, the gate stack materials have little chance of degradation from high temperature process. Considering the gate length of 60 nm, the fabricated ISG MOSFET shows good electrical characteristics, DIBL of 81mV/V, and SS of 79 mV/dec.",

keywords = "High-k, Metal gate, MOSFET, SOI, Ultra thin body",

author = "Kiju Im and Ahn, \{Chang Geun\} and Yang, \{Jong Heon\} and Back, \{In Bok\} and Choi, \{Chel Jong\} and Seongjae Lee and Hyunsang Hwang and Cho, \{Won Ju\}",

year = "2006",

language = "English",

pages = "24--27",

note = "2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings ; Conference date: 07-05-2006 Through 11-05-2006",

}

TY - CONF

T1 - Inner sidewall gate MOSFET with HfO2 gate dielectric and Pt electrode

AU - Im, Kiju

AU - Ahn, Chang Geun

AU - Yang, Jong Heon

AU - Back, In Bok

AU - Choi, Chel Jong

AU - Lee, Seongjae

AU - Hwang, Hyunsang

AU - Cho, Won Ju

PY - 2006

Y1 - 2006

N2 - Ultra thin body (UTB) inner sidewall gate (ISG) MOSFET employed by HfO 2 gate dielectric and Pt electrode with gate length of 60 nm will be described. In ISG MOSFET, because high temperature source drain activation process is performed followed by gate stack, like replacement gate process, the gate stack materials have little chance of degradation from high temperature process. Considering the gate length of 60 nm, the fabricated ISG MOSFET shows good electrical characteristics, DIBL of 81mV/V, and SS of 79 mV/dec.

AB - Ultra thin body (UTB) inner sidewall gate (ISG) MOSFET employed by HfO 2 gate dielectric and Pt electrode with gate length of 60 nm will be described. In ISG MOSFET, because high temperature source drain activation process is performed followed by gate stack, like replacement gate process, the gate stack materials have little chance of degradation from high temperature process. Considering the gate length of 60 nm, the fabricated ISG MOSFET shows good electrical characteristics, DIBL of 81mV/V, and SS of 79 mV/dec.

KW - High-k

KW - Metal gate

KW - MOSFET

KW - SOI

KW - Ultra thin body

UR - https://www.scopus.com/pages/publications/33845190399

M3 - Paper

AN - SCOPUS:33845190399

SP - 24

EP - 27

T2 - 2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings

Y2 - 7 May 2006 through 11 May 2006

ER -

Inner sidewall gate MOSFET with HfO₂ gate dielectric and Pt electrode

Abstract

Conference

Keywords

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