Integrated multiscale multistep process simulation

Yeon Ho Im; M. O. Bloomfield; C. P. Sukam; J. A. Tichy; T. S. Cale; Jongwon Seok

doi:10.1109/SISPAD.2003.1233698

Integrated multiscale multistep process simulation

Yeon Ho Im
, M. O. Bloomfield
, C. P. Sukam
, J. A. Tichy
, T. S. Cale
, Jongwon Seok

Division of Chemical Engineering

Focus Center-New York
Rensselaer Polytechnic Institute

Research output: Contribution to conference › Conference paper › peer-review

3 Scopus citations

Abstract

We discuss the integration of process simulations for several process steps in the fabrication of a simple Damascene structure. Starting with a blanket silicon dioxide substrate and a patterned mask, we perform simulations of plasma etching, PVD barrier deposition, PVD seed layer deposition, electrochemical deposition of copper using an additive-containing bath, and chemical mechanical polishing. This virtual process sequence demonstrates the use of process simulation to study not just individual process steps, but process flows. After using 2d features and 3d/2d simulations to calibrate models for a particular process, we present samples of fully 3d/3d simulations to show possible approaches to answering questions that cannot be addressed by 2D simulators, such as deposition into dual Damascene structure and the plasma etching of porous materials.

Original language	English
Title of host publication	SISPAD 2003 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	307-310
Number of pages	4
ISBN (Electronic)	0780378261
DOIs	https://doi.org/10.1109/SISPAD.2003.1233698
State	Published - 2003
Event	2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2003 - Boston, United States Duration: 2003.09.3 → 2003.09.5

Publication series

Name	International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
Volume	2003-January

Conference

Conference	2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2003
Country/Territory	United States
City	Boston
Period	03.09.3 → 03.09.5

Keywords

Atherosclerosis
Chemicals
Copper
Etching
Fabrication
Plasma applications
Plasma chemistry
Plasma materials processing
Plasma simulation
Silicon compounds

Access to Document

10.1109/SISPAD.2003.1233698

Cite this

Im, Y. H., Bloomfield, M. O., Sukam, C. P., Tichy, J. A., Cale, T. S., & Seok, J. (2003). Integrated multiscale multistep process simulation. In SISPAD 2003 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices (pp. 307-310). Article 1233698 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD; Vol. 2003-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SISPAD.2003.1233698

Im, Yeon Ho ; Bloomfield, M. O. ; Sukam, C. P. et al. / Integrated multiscale multistep process simulation. SISPAD 2003 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices. Institute of Electrical and Electronics Engineers Inc., 2003. pp. 307-310 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD).

@inproceedings{f497ee3430cd4373acf8d401dbf1a117,

title = "Integrated multiscale multistep process simulation",

abstract = "We discuss the integration of process simulations for several process steps in the fabrication of a simple Damascene structure. Starting with a blanket silicon dioxide substrate and a patterned mask, we perform simulations of plasma etching, PVD barrier deposition, PVD seed layer deposition, electrochemical deposition of copper using an additive-containing bath, and chemical mechanical polishing. This virtual process sequence demonstrates the use of process simulation to study not just individual process steps, but process flows. After using 2d features and 3d/2d simulations to calibrate models for a particular process, we present samples of fully 3d/3d simulations to show possible approaches to answering questions that cannot be addressed by 2D simulators, such as deposition into dual Damascene structure and the plasma etching of porous materials.",

keywords = "Atherosclerosis, Chemicals, Copper, Etching, Fabrication, Plasma applications, Plasma chemistry, Plasma materials processing, Plasma simulation, Silicon compounds",

author = "Im, \{Yeon Ho\} and Bloomfield, \{M. O.\} and Sukam, \{C. P.\} and Tichy, \{J. A.\} and Cale, \{T. S.\} and Jongwon Seok",

note = "Publisher Copyright: {\textcopyright} 2003 IEEE.; 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2003 ; Conference date: 03-09-2003 Through 05-09-2003",

year = "2003",

doi = "10.1109/SISPAD.2003.1233698",

language = "English",

series = "International Conference on Simulation of Semiconductor Processes and Devices, SISPAD",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "307--310",

booktitle = "SISPAD 2003 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices",

}

Im, YH, Bloomfield, MO, Sukam, CP, Tichy, JA, Cale, TS & Seok, J 2003, Integrated multiscale multistep process simulation. in SISPAD 2003 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices., 1233698, International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, vol. 2003-January, Institute of Electrical and Electronics Engineers Inc., pp. 307-310, 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2003, Boston, United States, 03.09.3. https://doi.org/10.1109/SISPAD.2003.1233698

Integrated multiscale multistep process simulation. / Im, Yeon Ho; Bloomfield, M. O.; Sukam, C. P. et al.
SISPAD 2003 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices. Institute of Electrical and Electronics Engineers Inc., 2003. p. 307-310 1233698 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD; Vol. 2003-January).

Research output: Contribution to conference › Conference paper › peer-review

TY - GEN

T1 - Integrated multiscale multistep process simulation

AU - Im, Yeon Ho

AU - Bloomfield, M. O.

AU - Sukam, C. P.

AU - Tichy, J. A.

AU - Cale, T. S.

AU - Seok, Jongwon

PY - 2003

Y1 - 2003

N2 - We discuss the integration of process simulations for several process steps in the fabrication of a simple Damascene structure. Starting with a blanket silicon dioxide substrate and a patterned mask, we perform simulations of plasma etching, PVD barrier deposition, PVD seed layer deposition, electrochemical deposition of copper using an additive-containing bath, and chemical mechanical polishing. This virtual process sequence demonstrates the use of process simulation to study not just individual process steps, but process flows. After using 2d features and 3d/2d simulations to calibrate models for a particular process, we present samples of fully 3d/3d simulations to show possible approaches to answering questions that cannot be addressed by 2D simulators, such as deposition into dual Damascene structure and the plasma etching of porous materials.

AB - We discuss the integration of process simulations for several process steps in the fabrication of a simple Damascene structure. Starting with a blanket silicon dioxide substrate and a patterned mask, we perform simulations of plasma etching, PVD barrier deposition, PVD seed layer deposition, electrochemical deposition of copper using an additive-containing bath, and chemical mechanical polishing. This virtual process sequence demonstrates the use of process simulation to study not just individual process steps, but process flows. After using 2d features and 3d/2d simulations to calibrate models for a particular process, we present samples of fully 3d/3d simulations to show possible approaches to answering questions that cannot be addressed by 2D simulators, such as deposition into dual Damascene structure and the plasma etching of porous materials.

KW - Atherosclerosis

KW - Chemicals

KW - Copper

KW - Etching

KW - Fabrication

KW - Plasma applications

KW - Plasma chemistry

KW - Plasma materials processing

KW - Plasma simulation

KW - Silicon compounds

UR - https://www.scopus.com/pages/publications/84943241663

U2 - 10.1109/SISPAD.2003.1233698

DO - 10.1109/SISPAD.2003.1233698

M3 - Conference paper

AN - SCOPUS:84943241663

T3 - International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

SP - 307

EP - 310

BT - SISPAD 2003 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2003

Y2 - 3 September 2003 through 5 September 2003

ER -

Im YH, Bloomfield MO, Sukam CP, Tichy JA, Cale TS, Seok J. Integrated multiscale multistep process simulation. In SISPAD 2003 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices. Institute of Electrical and Electronics Engineers Inc. 2003. p. 307-310. 1233698. (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). doi: 10.1109/SISPAD.2003.1233698

Integrated multiscale multistep process simulation

Abstract

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Keywords

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