Abstract
We discuss the integration of process simulations for several process steps in the fabrication of a simple Damascene structure. Starting with a blanket silicon dioxide substrate and a patterned mask, we perform simulations of plasma etching, PVD barrier deposition, PVD seed layer deposition, electrochemical deposition of copper using an additive-containing bath. We then simulate chemical mechanical polishing to banks of trenches formed from these results to study "chip-scale" effects; e.g., pad bending. This virtual process sequence demonstrates the use of process simulation to study not just individual process steps, but process flows. Finally, we present an example of a fully 3d/3d simulation into a dual Damascene structure; a situation for which 2d/2d simulation would not provide quantitatively correct results [1].
| Original language | English |
|---|---|
| Pages (from-to) | 775-779 |
| Number of pages | 5 |
| Journal | Advanced Metallization Conference (AMC) |
| State | Published - 2003 |
| Event | Advanced Metallization Conference 2003, AMC 2003 - Montreal, Que., Canada Duration: 2003.10.21 → 2003.10.23 |
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