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Integrated multistep process simulation with chip-scale structures

  • Max O. Bloomfield*
  • , Leonard J. Borucki
  • , Yeon Ho Im
  • , Timothy S. Cale
  • *Corresponding author for this work
  • Rensselaer Polytechnic Institute
  • Intelligent Planar

Research output: Contribution to journalConference articlepeer-review

Abstract

We discuss the integration of process simulations for several process steps in the fabrication of a simple Damascene structure. Starting with a blanket silicon dioxide substrate and a patterned mask, we perform simulations of plasma etching, PVD barrier deposition, PVD seed layer deposition, electrochemical deposition of copper using an additive-containing bath. We then simulate chemical mechanical polishing to banks of trenches formed from these results to study "chip-scale" effects; e.g., pad bending. This virtual process sequence demonstrates the use of process simulation to study not just individual process steps, but process flows. Finally, we present an example of a fully 3d/3d simulation into a dual Damascene structure; a situation for which 2d/2d simulation would not provide quantitatively correct results [1].

Original languageEnglish
Pages (from-to)775-779
Number of pages5
JournalAdvanced Metallization Conference (AMC)
StatePublished - 2003
EventAdvanced Metallization Conference 2003, AMC 2003 - Montreal, Que., Canada
Duration: 2003.10.212003.10.23

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