Intense Pulsed Light Annealing for High-k Capacitor Integration in 1T-1C DRAM with a-IGZO Cell Transistors

Heetae Kim; Seohak Park; Johak Jeong; Jihoon Jeon; Hoseok Lee; Chihun Sung; Jeho Na; Min Ju Kim; Seong Keun Kim; Sung Yool Choi; Keun Heo; Sung Haeng Cho; Byung Jin Cho

doi:10.1109/LED.2024.3485609

Intense Pulsed Light Annealing for High-k Capacitor Integration in 1T-1C DRAM with a-IGZO Cell Transistors

Heetae Kim
, Seohak Park
, Johak Jeong
, Jihoon Jeon
, Hoseok Lee
, Chihun Sung
, Jeho Na
, Min Ju Kim
, Seong Keun Kim
, Sung Yool Choi
, Keun Heo
, Sung Haeng Cho
, Byung Jin Cho^*

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Korea Advanced Institute of Science and Technology
Jeonbuk National University
Korea University
Korea Institute of Science and Technology
Electronics and Telecommunications Research Institute
Dankook University

Research output: Contribution to journal › Journal article › peer-review

5 Scopus citations

Abstract

In this study, we report the integration of an a-IGZO cell transistor and a high-k ZrO₂ cell capacitor using Intense Pulsed Light (IPL) annealing for 1T-1C DRAM application. With IPL annealing, the ZrO₂ capacitor can successfully achieve a high k-value of 33, without any detrimental effect to the electrical performance of the IGZO transistor which is vulnerable to high temperature process. The a-IGZO transistor could maintain an ultra-low leakage current of 1.3 × 10^-16 A/μ m, even after the high-k dielectric crystallization process.

Original language	English
Pages (from-to)	2431-2434
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	45
Issue number	12
DOIs	https://doi.org/10.1109/LED.2024.3485609
State	Published - 2024

Keywords

1T-1C DRAM
high-k dielectric
Intense pulsed light
oxide semiconductor

Quacquarelli Symonds(QS) Subject Topics

Materials Science
Engineering - Electrical & Electronic
Engineering - Petroleum

Access to Document

10.1109/LED.2024.3485609

Cite this

@article{d524aea7d6014294a39cd9142e1bc8b6,

title = "Intense Pulsed Light Annealing for High-k Capacitor Integration in 1T-1C DRAM with a-IGZO Cell Transistors",

abstract = "In this study, we report the integration of an a-IGZO cell transistor and a high-k ZrO2 cell capacitor using Intense Pulsed Light (IPL) annealing for 1T-1C DRAM application. With IPL annealing, the ZrO2 capacitor can successfully achieve a high k-value of 33, without any detrimental effect to the electrical performance of the IGZO transistor which is vulnerable to high temperature process. The a-IGZO transistor could maintain an ultra-low leakage current of 1.3 {\texttimes} 10-16 A/μ m, even after the high-k dielectric crystallization process.",

keywords = "1T-1C DRAM, high-k dielectric, Intense pulsed light, oxide semiconductor",

author = "Heetae Kim and Seohak Park and Johak Jeong and Jihoon Jeon and Hoseok Lee and Chihun Sung and Jeho Na and \{Ju Kim\}, Min and \{Keun Kim\}, Seong and Choi, \{Sung Yool\} and Keun Heo and \{Haeng Cho\}, Sung and \{Jin Cho\}, Byung",

note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

year = "2024",

doi = "10.1109/LED.2024.3485609",

language = "English",

volume = "45",

pages = "2431--2434",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

number = "12",

}

TY - JOUR

T1 - Intense Pulsed Light Annealing for High-k Capacitor Integration in 1T-1C DRAM with a-IGZO Cell Transistors

AU - Kim, Heetae

AU - Park, Seohak

AU - Jeong, Johak

AU - Jeon, Jihoon

AU - Lee, Hoseok

AU - Sung, Chihun

AU - Na, Jeho

AU - Ju Kim, Min

AU - Keun Kim, Seong

AU - Choi, Sung Yool

AU - Heo, Keun

AU - Haeng Cho, Sung

AU - Jin Cho, Byung

PY - 2024

Y1 - 2024

N2 - In this study, we report the integration of an a-IGZO cell transistor and a high-k ZrO2 cell capacitor using Intense Pulsed Light (IPL) annealing for 1T-1C DRAM application. With IPL annealing, the ZrO2 capacitor can successfully achieve a high k-value of 33, without any detrimental effect to the electrical performance of the IGZO transistor which is vulnerable to high temperature process. The a-IGZO transistor could maintain an ultra-low leakage current of 1.3 × 10-16 A/μ m, even after the high-k dielectric crystallization process.

AB - In this study, we report the integration of an a-IGZO cell transistor and a high-k ZrO2 cell capacitor using Intense Pulsed Light (IPL) annealing for 1T-1C DRAM application. With IPL annealing, the ZrO2 capacitor can successfully achieve a high k-value of 33, without any detrimental effect to the electrical performance of the IGZO transistor which is vulnerable to high temperature process. The a-IGZO transistor could maintain an ultra-low leakage current of 1.3 × 10-16 A/μ m, even after the high-k dielectric crystallization process.

KW - 1T-1C DRAM

KW - high-k dielectric

KW - Intense pulsed light

KW - oxide semiconductor

UR - https://www.scopus.com/pages/publications/85207953030

U2 - 10.1109/LED.2024.3485609

DO - 10.1109/LED.2024.3485609

M3 - Journal article

AN - SCOPUS:85207953030

SN - 0741-3106

VL - 45

SP - 2431

EP - 2434

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 12

ER -

Intense Pulsed Light Annealing for High-k Capacitor Integration in 1T-1C DRAM with a-IGZO Cell Transistors

Abstract

Keywords

Quacquarelli Symonds(QS) Subject Topics

Access to Document

Other files and links

Fingerprint

Cite this