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Interaction of Ag with the Si(1 1 1)1 × 1-H surface

  • J. H. Han
  • , H. N. Hwang
  • , H. G. Jee
  • , B. Kim
  • , S. Chung
  • , Y. D. Kim
  • , C. C. Hwang*
  • *Corresponding author for this work
  • Pohang University of Science and Technology
  • Sungkyunkwan University

Research output: Contribution to journalJournal articlepeer-review

Abstract

Synchrotron radiation based photoemission spectroscopy (SRPES) and low energy electron diffraction (LEED) are used to study the interaction between Ag atoms and the Si(1 1 1)1 × 1-H surface. At an Ag coverage of 0.063 monolayers (ML) on the Si(1 1 1)1 × 1-H surface, the Si 2p component corresponding to Si-H bonds decreases, and an additional Si 2p component appears which shifts to a lower binding energy by 109 meV with respect to the Si bulk peak. The new Si 2p component is also observed for 0.25 ML Ag on the Si(1 1 1)7 × 7 surface. These findings suggest that Ag atoms replace the H atoms of the Si(1 1 1)1 × 1-H surface and form direct Ag-Si bonds. Contrary to the widely accepted view that there is no chemical interaction between Ag particles and the H-passivated Si surface, these results are in good agreement with recent first-principles calculations.

Original languageEnglish
Pages (from-to)853-856
Number of pages4
JournalSurface Science
Volume604
Issue number9-10
DOIs
StatePublished - 2010.05.15

Keywords

  • Ag-Si bonds
  • Low energy electron diffraction
  • Si(1 1 1)1 × 1-H surface
  • Silver atoms
  • Synchrotron radiation based photoemission spectroscopy

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