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Internal quantum efficiency in light-emitting diodes based on the width of efficiency-versus-carrier-concentration curve

  • G. B. Lin*
  • , Q. Shan
  • , A. J. Birkel
  • , J. Cho
  • , E. F. Schubert
  • , D. D. Koleske
  • , M. H. Crawford
  • *Corresponding author for this work
  • Rensselaer Polytechnic Institute
  • Sandia National Laboratories, New Mexico

Research output: Contribution to conferenceConference paperpeer-review

Abstract

Based on the ABC model, we derive a relationship between the internal quantum efficiency (IQE) and the width of the efficiency-versus-carrier- concentration curve. We determine the IQE of LEDs at temperatures ranging from 100K to 300K.

Original languageEnglish
Title of host publication2012 Conference on Lasers and Electro-Optics, CLEO 2012
PublisherIEEE Computer Society
ISBN (Print)9781467318396
DOIs
StatePublished - 2012
Event2012 Conference on Lasers and Electro-Optics, CLEO 2012 - San Jose, CA, United States
Duration: 2012.05.62012.05.11

Publication series

Name2012 Conference on Lasers and Electro-Optics, CLEO 2012

Conference

Conference2012 Conference on Lasers and Electro-Optics, CLEO 2012
Country/TerritoryUnited States
CitySan Jose, CA
Period12.05.612.05.11

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