Interpretation of dominant impurities in Cu films by secondary ion mass spectrometry and glow discharge mass spectrometry

Jae Won Lim; Joon Woo Bae; Kouji Mimura; Minoru Isshiki

doi:10.1143/JJAP.44.373

Interpretation of dominant impurities in Cu films by secondary ion mass spectrometry and glow discharge mass spectrometry

Jae Won Lim^*
, Joon Woo Bae
, Kouji Mimura
, Minoru Isshiki

^*Corresponding author for this work

Metallurgical System Engineering

Tohoku University

Research output: Contribution to journal › Journal article › peer-review

3 Scopus citations

Abstract

Cu films were deposited on Si (100) substrates at substrate bias voltages of 0V and -50V by non-mass separated ion beam deposition. SIMS and GDMS were used to determine the impurity concentrations of a Cu target and Cu films. According to the quantitative GDMS results, many unknown peaks observed in the SIMS spectra of the Cu films were assigned to cluster states such as C _xH_x, O_xH_x, and C_xO _xH_x. Moreover, it was found that the dominant impurities in the films were H, C, N, and O elements.

Original language	English
Pages (from-to)	373-374
Number of pages	2
Journal	Japanese Journal of Applied Physics
Volume	44
Issue number	1 A
DOIs	https://doi.org/10.1143/JJAP.44.373
State	Published - 2005.01

Keywords

Copper
GDMS
Impurity
Ion beam
SIMS
Thin film

Access to Document

10.1143/JJAP.44.373

Cite this

@article{edb458ba79fd4571a9d48aee19b64a40,

title = "Interpretation of dominant impurities in Cu films by secondary ion mass spectrometry and glow discharge mass spectrometry",

abstract = "Cu films were deposited on Si (100) substrates at substrate bias voltages of 0V and -50V by non-mass separated ion beam deposition. SIMS and GDMS were used to determine the impurity concentrations of a Cu target and Cu films. According to the quantitative GDMS results, many unknown peaks observed in the SIMS spectra of the Cu films were assigned to cluster states such as C xHx, OxHx, and CxO xHx. Moreover, it was found that the dominant impurities in the films were H, C, N, and O elements.",

keywords = "Copper, GDMS, Impurity, Ion beam, SIMS, Thin film",

author = "Lim, \{Jae Won\} and Bae, \{Joon Woo\} and Kouji Mimura and Minoru Isshiki",

year = "2005",

month = jan,

doi = "10.1143/JJAP.44.373",

language = "English",

volume = "44",

pages = "373--374",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

number = "1 A",

}

TY - JOUR

T1 - Interpretation of dominant impurities in Cu films by secondary ion mass spectrometry and glow discharge mass spectrometry

AU - Lim, Jae Won

AU - Bae, Joon Woo

AU - Mimura, Kouji

AU - Isshiki, Minoru

PY - 2005/1

Y1 - 2005/1

N2 - Cu films were deposited on Si (100) substrates at substrate bias voltages of 0V and -50V by non-mass separated ion beam deposition. SIMS and GDMS were used to determine the impurity concentrations of a Cu target and Cu films. According to the quantitative GDMS results, many unknown peaks observed in the SIMS spectra of the Cu films were assigned to cluster states such as C xHx, OxHx, and CxO xHx. Moreover, it was found that the dominant impurities in the films were H, C, N, and O elements.

AB - Cu films were deposited on Si (100) substrates at substrate bias voltages of 0V and -50V by non-mass separated ion beam deposition. SIMS and GDMS were used to determine the impurity concentrations of a Cu target and Cu films. According to the quantitative GDMS results, many unknown peaks observed in the SIMS spectra of the Cu films were assigned to cluster states such as C xHx, OxHx, and CxO xHx. Moreover, it was found that the dominant impurities in the films were H, C, N, and O elements.

KW - Copper

KW - GDMS

KW - Impurity

KW - Ion beam

KW - SIMS

KW - Thin film

UR - https://www.scopus.com/pages/publications/15544362252

U2 - 10.1143/JJAP.44.373

DO - 10.1143/JJAP.44.373

M3 - Journal article

AN - SCOPUS:15544362252

SN - 0021-4922

VL - 44

SP - 373

EP - 374

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 1 A

ER -

Interpretation of dominant impurities in Cu films by secondary ion mass spectrometry and glow discharge mass spectrometry

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this