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Investigating the performance of RF MEMS switches

  • Hieng Tiong Su*
  • , Ignacio Llamas-Garro
  • , Michael J. Lancaster
  • , Martin Prest
  • , Jae Hyoung Park
  • , Jung Mu Kim
  • , Chang Wook Baek
  • , Yong Kweon Kim
  • *Corresponding author for this work
  • Swinburne University of Technology
  • Instituto Nacional de Astrofisica Optica y Electronica
  • University of Birmingham
  • LG Corporation
  • Seoul National University
  • Chung-Ang University

Research output: Contribution to conferenceConference paperpeer-review

Abstract

The performance of Micro-Electro-Mechanical System (MEMS) metal switches were investigated at wide temperature range. Measurements were carried out using cryogenic probe station and S-parameters were taken using a network analyser for frequencies up to 20 GHz. A total of 28 switches were evaluated. The investigation shows a 50% increase in the actuation voltage and a decrease in the percentage of operational switches as the temperature was reduced to 10 K. At room temperature the best isolation (when open) was 30 dB at 10 GHz with an insertion loss of 0.14 dB (when closed). Measurement accuracy was reduced at low temperature, however, isolations and insertion losses were similar to room temperature values.

Original languageEnglish
Title of host publicationICSE 2006
Subtitle of host publication2006 IEEE International Conference on Semiconductor Electronics, Proceedings
Pages263-266
Number of pages4
DOIs
StatePublished - 2006
Event2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006 - Kuala Lumpur, Malaysia
Duration: 2006.11.292006.12.1

Publication series

NameIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

Conference

Conference2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006
Country/TerritoryMalaysia
CityKuala Lumpur
Period06.11.2906.12.1

Keywords

  • Actuation voltage
  • Low temperatures
  • Metal switch
  • Reliability
  • RF MEMS

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