Investigation of diffusion in AlAs/GaAs distributed Bragg reflectors using HAADF STEM imaging

M. Schowalter; M. Tewes; K. Frank; R. Imlau; A. Rosenauer; H. S. Lee; A. Rastelli; O. G. Schmidt; M. Tavast; T. Leinonen; M. Guina

doi:10.1088/1742-6596/326/1/012035

Investigation of diffusion in AlAs/GaAs distributed Bragg reflectors using HAADF STEM imaging

M. Schowalter^*
, M. Tewes
, K. Frank
, R. Imlau
, A. Rosenauer
, H. S. Lee
, A. Rastelli
, O. G. Schmidt
, M. Tavast
, T. Leinonen
, M. Guina

^*Corresponding author for this work

Department of Physics

University of Bremen
Gwangju Institute of Science and Technology
Fraunhofer Institute for Integrated Circuits
Tampere University

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

In this contribution we have studied the diffusion of Al in AlAs/GaAs distributed Bragg-reflectors using the high angle annular dark field (HAADF) scanning transmission electron microscopy (STEM) intensity. The measured intensity is normalized to the intensity of the incoming electron beam using a detector scan. The normalized intensity can be directly compared with a set of frozen lattice simulations yielding specimen thickness in regions with known composition or concentration in regions with known thickness. The thickness was evaluated both from GaAs and AlAs regions yielding that the specimen was about 15 nm thinner in AlAs regions due to oxidation. For the concentration evaluation the thickness was derived from GaAs regions and concentrations up to 1.2 were found due to the overestimated thickness. Concentration profiles were scaled down to 1.0 and fitted to the solution of Fick's laws.

Original language	English
Article number	012035
Journal	Journal of Physics: Conference Series
Volume	326
Issue number	1
DOIs	https://doi.org/10.1088/1742-6596/326/1/012035
State	Published - 2011
Event	17th International Conference on Microscopy of Semiconducting Materials 2011 - Cambridge, United Kingdom Duration: 2011.04.4 → 2011.04.7

Access to Document

10.1088/1742-6596/326/1/012035

Cite this

@article{e358b173c7904cef9289f5be4ee26205,

title = "Investigation of diffusion in AlAs/GaAs distributed Bragg reflectors using HAADF STEM imaging",

abstract = "In this contribution we have studied the diffusion of Al in AlAs/GaAs distributed Bragg-reflectors using the high angle annular dark field (HAADF) scanning transmission electron microscopy (STEM) intensity. The measured intensity is normalized to the intensity of the incoming electron beam using a detector scan. The normalized intensity can be directly compared with a set of frozen lattice simulations yielding specimen thickness in regions with known composition or concentration in regions with known thickness. The thickness was evaluated both from GaAs and AlAs regions yielding that the specimen was about 15 nm thinner in AlAs regions due to oxidation. For the concentration evaluation the thickness was derived from GaAs regions and concentrations up to 1.2 were found due to the overestimated thickness. Concentration profiles were scaled down to 1.0 and fitted to the solution of Fick's laws.",

author = "M. Schowalter and M. Tewes and K. Frank and R. Imlau and A. Rosenauer and Lee, \{H. S.\} and A. Rastelli and Schmidt, \{O. G.\} and M. Tavast and T. Leinonen and M. Guina",

year = "2011",

doi = "10.1088/1742-6596/326/1/012035",

language = "English",

volume = "326",

journal = "Journal of Physics: Conference Series",

issn = "1742-6588",

number = "1",

note = "17th International Conference on Microscopy of Semiconducting Materials 2011 ; Conference date: 04-04-2011 Through 07-04-2011",

}

TY - JOUR

T1 - Investigation of diffusion in AlAs/GaAs distributed Bragg reflectors using HAADF STEM imaging

AU - Schowalter, M.

AU - Tewes, M.

AU - Frank, K.

AU - Imlau, R.

AU - Rosenauer, A.

AU - Lee, H. S.

AU - Rastelli, A.

AU - Schmidt, O. G.

AU - Tavast, M.

AU - Leinonen, T.

AU - Guina, M.

PY - 2011

Y1 - 2011

N2 - In this contribution we have studied the diffusion of Al in AlAs/GaAs distributed Bragg-reflectors using the high angle annular dark field (HAADF) scanning transmission electron microscopy (STEM) intensity. The measured intensity is normalized to the intensity of the incoming electron beam using a detector scan. The normalized intensity can be directly compared with a set of frozen lattice simulations yielding specimen thickness in regions with known composition or concentration in regions with known thickness. The thickness was evaluated both from GaAs and AlAs regions yielding that the specimen was about 15 nm thinner in AlAs regions due to oxidation. For the concentration evaluation the thickness was derived from GaAs regions and concentrations up to 1.2 were found due to the overestimated thickness. Concentration profiles were scaled down to 1.0 and fitted to the solution of Fick's laws.

AB - In this contribution we have studied the diffusion of Al in AlAs/GaAs distributed Bragg-reflectors using the high angle annular dark field (HAADF) scanning transmission electron microscopy (STEM) intensity. The measured intensity is normalized to the intensity of the incoming electron beam using a detector scan. The normalized intensity can be directly compared with a set of frozen lattice simulations yielding specimen thickness in regions with known composition or concentration in regions with known thickness. The thickness was evaluated both from GaAs and AlAs regions yielding that the specimen was about 15 nm thinner in AlAs regions due to oxidation. For the concentration evaluation the thickness was derived from GaAs regions and concentrations up to 1.2 were found due to the overestimated thickness. Concentration profiles were scaled down to 1.0 and fitted to the solution of Fick's laws.

UR - https://www.scopus.com/pages/publications/82955171599

U2 - 10.1088/1742-6596/326/1/012035

DO - 10.1088/1742-6596/326/1/012035

M3 - Conference article

AN - SCOPUS:82955171599

SN - 1742-6588

VL - 326

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

IS - 1

M1 - 012035

T2 - 17th International Conference on Microscopy of Semiconducting Materials 2011

Y2 - 4 April 2011 through 7 April 2011

ER -

Investigation of diffusion in AlAs/GaAs distributed Bragg reflectors using HAADF STEM imaging

Abstract

Access to Document

Other files and links

Fingerprint

Cite this