Investigation of interfacial reaction of Ni on epitaxial Si 1-xGex (001) layers

Y. W. Ok; S. H. Kim; Y. J. Song; K. H. Shim; T. Y. Seong

Investigation of interfacial reaction of Ni on epitaxial Si _1-xGe_x (001) layers

Y. W. Ok^*
, S. H. Kim
, Y. J. Song
, K. H. Shim
, T. Y. Seong

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Gwangju Institute of Science and Technology
Korea Basic Science Institute

Research output: Contribution to journal › Conference article › peer-review

Abstract

We investigate the interfacial reaction of Ni on Si_1-xGe _x (x = 0.0-0.2) epitaxial (001) layers as a function of annealing temperature in the range of 300-800°C. Glancing X-ray diffraction results show that for the reactions of Ni on Si_1-xGe_x (x=0.1, 0.2), only Ni germanosilicide [Ni(Si_1-yGe_y)] phase is observed when annealed at temperatures in the range of 300-800°C. The Ni germanosilicide layers start to agglomerate at temperatures above 600°C and become discontinuous at 800°C, leading to hemi-spherical shaped germanosilicide grains. TEM and EDS results show that Ge outdiffuses rapidly from the Ni germanosilcide and is segregated at the germanosilcide/SiGe interface regions and the surface regions between the agglomerated germanosilcide grains.

Original language	English
Pages (from-to)	467-470
Number of pages	4
Journal	Design and Nature
Volume	6
State	Published - 2004
Event	Design and Nature II: Comparing Design in Nature with Science and Engineering - Rhodes, Greece Duration: 2004.06.28 → 2004.06.30

Cite this

@article{7f4d4ebea5ae4d9592bea5f8877a35d7,

title = "Investigation of interfacial reaction of Ni on epitaxial Si 1-xGex (001) layers",

abstract = "We investigate the interfacial reaction of Ni on Si1-xGe x (x = 0.0-0.2) epitaxial (001) layers as a function of annealing temperature in the range of 300-800°C. Glancing X-ray diffraction results show that for the reactions of Ni on Si1-xGex (x=0.1, 0.2), only Ni germanosilicide [Ni(Si1-yGey)] phase is observed when annealed at temperatures in the range of 300-800°C. The Ni germanosilicide layers start to agglomerate at temperatures above 600°C and become discontinuous at 800°C, leading to hemi-spherical shaped germanosilicide grains. TEM and EDS results show that Ge outdiffuses rapidly from the Ni germanosilcide and is segregated at the germanosilcide/SiGe interface regions and the surface regions between the agglomerated germanosilcide grains.",

author = "Ok, \{Y. W.\} and Kim, \{S. H.\} and Song, \{Y. J.\} and Shim, \{K. H.\} and Seong, \{T. Y.\}",

year = "2004",

language = "English",

volume = "6",

pages = "467--470",

journal = "Design and Nature",

issn = "1478-0585",

note = "Design and Nature II: Comparing Design in Nature with Science and Engineering ; Conference date: 28-06-2004 Through 30-06-2004",

}

TY - JOUR

T1 - Investigation of interfacial reaction of Ni on epitaxial Si 1-xGex (001) layers

AU - Ok, Y. W.

AU - Kim, S. H.

AU - Song, Y. J.

AU - Shim, K. H.

AU - Seong, T. Y.

PY - 2004

Y1 - 2004

N2 - We investigate the interfacial reaction of Ni on Si1-xGe x (x = 0.0-0.2) epitaxial (001) layers as a function of annealing temperature in the range of 300-800°C. Glancing X-ray diffraction results show that for the reactions of Ni on Si1-xGex (x=0.1, 0.2), only Ni germanosilicide [Ni(Si1-yGey)] phase is observed when annealed at temperatures in the range of 300-800°C. The Ni germanosilicide layers start to agglomerate at temperatures above 600°C and become discontinuous at 800°C, leading to hemi-spherical shaped germanosilicide grains. TEM and EDS results show that Ge outdiffuses rapidly from the Ni germanosilcide and is segregated at the germanosilcide/SiGe interface regions and the surface regions between the agglomerated germanosilcide grains.

AB - We investigate the interfacial reaction of Ni on Si1-xGe x (x = 0.0-0.2) epitaxial (001) layers as a function of annealing temperature in the range of 300-800°C. Glancing X-ray diffraction results show that for the reactions of Ni on Si1-xGex (x=0.1, 0.2), only Ni germanosilicide [Ni(Si1-yGey)] phase is observed when annealed at temperatures in the range of 300-800°C. The Ni germanosilicide layers start to agglomerate at temperatures above 600°C and become discontinuous at 800°C, leading to hemi-spherical shaped germanosilicide grains. TEM and EDS results show that Ge outdiffuses rapidly from the Ni germanosilcide and is segregated at the germanosilcide/SiGe interface regions and the surface regions between the agglomerated germanosilcide grains.

UR - https://www.scopus.com/pages/publications/7744227271

M3 - Conference article

AN - SCOPUS:7744227271

SN - 1478-0585

VL - 6

SP - 467

EP - 470

JO - Design and Nature

JF - Design and Nature

T2 - Design and Nature II: Comparing Design in Nature with Science and Engineering

Y2 - 28 June 2004 through 30 June 2004

ER -

Investigation of interfacial reaction of Ni on epitaxial Si _1-xGe_x (001) layers

Abstract

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