Investigation of the current-voltage characteristics of N+/P junction silicon solar cell emitters formed by phosphorus diffusion paste on P-Si substrate

  • Jin Sung Kim*
  • , Kyungwon Moon
  • , Kyu Sang Shin
  • , Myeong Il Jung
  • , Chel Jong Choi
  • *Corresponding author for this work

Research output: Contribution to conferenceConference paperpeer-review

Abstract

We have investigated the current-voltage characteristics of n+/p junction solar cells formed on p-Si substrate with n+ emitter junction formed by diffusion phosphorus paste by means of furnace annealing. The annealing has been carried out in different ambients. The diode annealed in O 2 ambient showed the best rectifying behavior while the diode annealed in Ar showed the least with degradation of rectifying behavior with increase of flow rate.

Original languageEnglish
Title of host publicationProgram - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011
Pages2164-2166
Number of pages3
DOIs
StatePublished - 2011
Event37th IEEE Photovoltaic Specialists Conference, PVSC 2011 - Seattle, WA, United States
Duration: 2011.06.192011.06.24

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Conference

Conference37th IEEE Photovoltaic Specialists Conference, PVSC 2011
Country/TerritoryUnited States
CitySeattle, WA
Period11.06.1911.06.24

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

  1. SDG 7 - Affordable and Clean Energy
    SDG 7 Affordable and Clean Energy

Quacquarelli Symonds(QS) Subject Topics

  • Engineering - Mechanical
  • Computer Science & Information Systems
  • Engineering - Electrical & Electronic
  • Engineering - Petroleum

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