Abstract
We have investigated the current-voltage characteristics of n+/p junction solar cells formed on p-Si substrate with n+ emitter junction formed by diffusion phosphorus paste by means of furnace annealing. The annealing has been carried out in different ambients. The diode annealed in O 2 ambient showed the best rectifying behavior while the diode annealed in Ar showed the least with degradation of rectifying behavior with increase of flow rate.
| Original language | English |
|---|---|
| Title of host publication | Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011 |
| Pages | 2164-2166 |
| Number of pages | 3 |
| DOIs | |
| State | Published - 2011 |
| Event | 37th IEEE Photovoltaic Specialists Conference, PVSC 2011 - Seattle, WA, United States Duration: 2011.06.19 → 2011.06.24 |
Publication series
| Name | Conference Record of the IEEE Photovoltaic Specialists Conference |
|---|---|
| ISSN (Print) | 0160-8371 |
Conference
| Conference | 37th IEEE Photovoltaic Specialists Conference, PVSC 2011 |
|---|---|
| Country/Territory | United States |
| City | Seattle, WA |
| Period | 11.06.19 → 11.06.24 |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 7 Affordable and Clean Energy
Quacquarelli Symonds(QS) Subject Topics
- Engineering - Mechanical
- Computer Science & Information Systems
- Engineering - Electrical & Electronic
- Engineering - Petroleum
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