@inproceedings{c17c2dafa9bf4efe99d110c206250bca,
title = "Investigation on hot carrier effects in n-type short-channel junctionless nanowire transistors",
abstract = "Hot carrier induced degradation of the n-type junctionless nanowire transistor (JNT) and the inversion-mode NWFET (IMNT) has been experimentally compared. The JNT shows better hot carrier (HC) immunity than the IMNT. The lateral peak electrical field intensity is lower in the JNT than the IMNT, which is observed by TCAD simulation work.",
keywords = "10-years lifetime, Hot carrier, Junctionless, Nanowire, Transistor",
author = "Park, \{Chan Hoon\} and Ko, \{Myung Dong\} and Kim, \{Ki Hyun\} and Lee, \{Jeong Soo\} and Jeong, \{Yoon Ha\}",
year = "2012",
doi = "10.1109/NANO.2012.6321907",
language = "English",
isbn = "9781467321983",
series = "Proceedings of the IEEE Conference on Nanotechnology",
booktitle = "2012 12th IEEE International Conference on Nanotechnology, NANO 2012",
note = "2012 12th IEEE International Conference on Nanotechnology, NANO 2012 ; Conference date: 20-08-2012 Through 23-08-2012",
}