Iodine doped polyaniline thin film for heterostructure devices via PECVD technique: Morphological, structural, and electrical properties

Sadia Ameen; Minwu Song; Don Gyu Kim; Yu Bin Im; Hyung Kee Seo; Young Soon Kim; Hyung Shik Shin

doi:10.1007/s13233-012-0009-2

Iodine doped polyaniline thin film for heterostructure devices via PECVD technique: Morphological, structural, and electrical properties

Sadia Ameen
, Minwu Song
, Don Gyu Kim
, Yu Bin Im
, Hyung Kee Seo
, Young Soon Kim^*
, Hyung Shik Shin

^*Corresponding author for this work

Department of Bio-Convergence Science

Research output: Contribution to journal › Journal article › peer-review

30 Scopus citations

Abstract

The deposition of undoped and iodine (I ₂)-doped polyaniline (PANI) on TiO ₂ thin film was carried out using plasma-enhanced chemical vapor deposition (PECVD) under different power inputs for the fabrication of p-polyaniline/n-TiO ₂ heterostructure devices. The increment in the size of TiO ₂ nanoparticles was observed after I ₂ doping by PECVD. The crystalline properties were altered upon I ₂ doping, suggesting a subtractive interaction between PANI and I ₂ moieties during PECVD. The significant changes in the structural and optical properties confirmed the I ₂ doping of PANI with strong bonding to the TiO ₂ nanomaterials. The existence of hydrogen bonding between the imine (-NH) of PANI and the hydroxyl (-OH) group of TiO ₂ nanomaterials was investigated by X-ray photoelectron spectroscopy characterization. A device fabricated by PANI/TiO ₂ or I ₂-PANI/TiO ₂ thin film with a top platinum (Pt) layer exhibited nonlinear behavior of current (I)-voltage (V) curve, i.e., moderate diode behavior. Compared to the Pt/PANI/TiO ₂ heterostructure device, the Pt/I ₂-PANI/TiO ₂ heterostructure device showed improved I-V properties with a considerably higher current of 0.050 mA, which might be attributed to the I ₂ doping-induced generation of large numbers of polarons in the PANI bandgap.

Original language	English
Pages (from-to)	30-36
Number of pages	7
Journal	Macromolecular Research
Volume	20
Issue number	1
DOIs	https://doi.org/10.1007/s13233-012-0009-2
State	Published - 2012.01

Keywords

electrical properties
iodine
plasma polymerization
polyaniline
TiO

Quacquarelli Symonds(QS) Subject Topics

Materials Science
Engineering - Petroleum
Engineering - Chemical
Chemistry

Access to Document

10.1007/s13233-012-0009-2

Cite this

@article{f0c3c405d176410f8375b7313a4af2d3,

title = "Iodine doped polyaniline thin film for heterostructure devices via PECVD technique: Morphological, structural, and electrical properties",

abstract = "The deposition of undoped and iodine (I 2)-doped polyaniline (PANI) on TiO 2 thin film was carried out using plasma-enhanced chemical vapor deposition (PECVD) under different power inputs for the fabrication of p-polyaniline/n-TiO 2 heterostructure devices. The increment in the size of TiO 2 nanoparticles was observed after I 2 doping by PECVD. The crystalline properties were altered upon I 2 doping, suggesting a subtractive interaction between PANI and I 2 moieties during PECVD. The significant changes in the structural and optical properties confirmed the I 2 doping of PANI with strong bonding to the TiO 2 nanomaterials. The existence of hydrogen bonding between the imine (-NH) of PANI and the hydroxyl (-OH) group of TiO 2 nanomaterials was investigated by X-ray photoelectron spectroscopy characterization. A device fabricated by PANI/TiO 2 or I 2-PANI/TiO 2 thin film with a top platinum (Pt) layer exhibited nonlinear behavior of current (I)-voltage (V) curve, i.e., moderate diode behavior. Compared to the Pt/PANI/TiO 2 heterostructure device, the Pt/I 2-PANI/TiO 2 heterostructure device showed improved I-V properties with a considerably higher current of 0.050 mA, which might be attributed to the I 2 doping-induced generation of large numbers of polarons in the PANI bandgap.",

keywords = "electrical properties, iodine, plasma polymerization, polyaniline, TiO",

author = "Sadia Ameen and Minwu Song and Kim, \{Don Gyu\} and Im, \{Yu Bin\} and Seo, \{Hyung Kee\} and Kim, \{Young Soon\} and Shin, \{Hyung Shik\}",

year = "2012",

month = jan,

doi = "10.1007/s13233-012-0009-2",

language = "English",

volume = "20",

pages = "30--36",

journal = "Macromolecular Research",

issn = "1598-5032",

number = "1",

}

TY - JOUR

T1 - Iodine doped polyaniline thin film for heterostructure devices via PECVD technique

T2 - Morphological, structural, and electrical properties

AU - Ameen, Sadia

AU - Song, Minwu

AU - Kim, Don Gyu

AU - Im, Yu Bin

AU - Seo, Hyung Kee

AU - Kim, Young Soon

AU - Shin, Hyung Shik

PY - 2012/1

Y1 - 2012/1

N2 - The deposition of undoped and iodine (I 2)-doped polyaniline (PANI) on TiO 2 thin film was carried out using plasma-enhanced chemical vapor deposition (PECVD) under different power inputs for the fabrication of p-polyaniline/n-TiO 2 heterostructure devices. The increment in the size of TiO 2 nanoparticles was observed after I 2 doping by PECVD. The crystalline properties were altered upon I 2 doping, suggesting a subtractive interaction between PANI and I 2 moieties during PECVD. The significant changes in the structural and optical properties confirmed the I 2 doping of PANI with strong bonding to the TiO 2 nanomaterials. The existence of hydrogen bonding between the imine (-NH) of PANI and the hydroxyl (-OH) group of TiO 2 nanomaterials was investigated by X-ray photoelectron spectroscopy characterization. A device fabricated by PANI/TiO 2 or I 2-PANI/TiO 2 thin film with a top platinum (Pt) layer exhibited nonlinear behavior of current (I)-voltage (V) curve, i.e., moderate diode behavior. Compared to the Pt/PANI/TiO 2 heterostructure device, the Pt/I 2-PANI/TiO 2 heterostructure device showed improved I-V properties with a considerably higher current of 0.050 mA, which might be attributed to the I 2 doping-induced generation of large numbers of polarons in the PANI bandgap.

AB - The deposition of undoped and iodine (I 2)-doped polyaniline (PANI) on TiO 2 thin film was carried out using plasma-enhanced chemical vapor deposition (PECVD) under different power inputs for the fabrication of p-polyaniline/n-TiO 2 heterostructure devices. The increment in the size of TiO 2 nanoparticles was observed after I 2 doping by PECVD. The crystalline properties were altered upon I 2 doping, suggesting a subtractive interaction between PANI and I 2 moieties during PECVD. The significant changes in the structural and optical properties confirmed the I 2 doping of PANI with strong bonding to the TiO 2 nanomaterials. The existence of hydrogen bonding between the imine (-NH) of PANI and the hydroxyl (-OH) group of TiO 2 nanomaterials was investigated by X-ray photoelectron spectroscopy characterization. A device fabricated by PANI/TiO 2 or I 2-PANI/TiO 2 thin film with a top platinum (Pt) layer exhibited nonlinear behavior of current (I)-voltage (V) curve, i.e., moderate diode behavior. Compared to the Pt/PANI/TiO 2 heterostructure device, the Pt/I 2-PANI/TiO 2 heterostructure device showed improved I-V properties with a considerably higher current of 0.050 mA, which might be attributed to the I 2 doping-induced generation of large numbers of polarons in the PANI bandgap.

KW - electrical properties

KW - iodine

KW - plasma polymerization

KW - polyaniline

KW - TiO

UR - https://www.scopus.com/pages/publications/84856208964

U2 - 10.1007/s13233-012-0009-2

DO - 10.1007/s13233-012-0009-2

M3 - Journal article

AN - SCOPUS:84856208964

SN - 1598-5032

VL - 20

SP - 30

EP - 36

JO - Macromolecular Research

JF - Macromolecular Research

IS - 1

ER -

Iodine doped polyaniline thin film for heterostructure devices via PECVD technique: Morphological, structural, and electrical properties

Abstract

Keywords

Quacquarelli Symonds(QS) Subject Topics

Access to Document

Other files and links

Fingerprint

Cite this