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Ion bombardment effects on ZnO nanowires during plasma treatment

  • H. W. Ra
  • , K. S. Choi
  • , C. W. Ok
  • , S. Y. Jo
  • , K. H. Bai
  • , Y. H. Im
  • Jeonbuk National University
  • Samsung

Research output: Contribution to journalJournal articlepeer-review

Abstract

We present the effects of ion bombardment on ZnO nanowires caused by their exposure to an Ar inductively coupled plasma. The conductivity of the individual ZnO nanowire was increased in up to 3 orders of magnitude due to increase in both carrier concentration and mobility, with a substantial negative shift in the threshold gate voltage also being observed. The drastic changes in the electrical properties were attributed to the decrease in species adsorbed on the surface, as well as to the increase in oxygen vacancies near the surface caused by ion bombardment.

Original languageEnglish
Article number033112
JournalApplied Physics Letters
Volume93
Issue number3
DOIs
StatePublished - 2008

Quacquarelli Symonds(QS) Subject Topics

  • Physics & Astronomy

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