Ion-implanted screen-printed n-type solar cell with tunnel oxide passivated back contact

Ajay D. Upadhyaya; Young Woo Ok; Elizabeth Chang; Vijaykumar Upadhyaya; Keeya Madani; Keith Tate; B. Rounsaville; Chel Jong Choi; V. Chandrasekaran; V. Yelundur; Atul Gupta; Ajeet Rohatgi

doi:10.1109/JPHOTOV.2015.2496861

Ion-implanted screen-printed n-type solar cell with tunnel oxide passivated back contact

Ajay D. Upadhyaya^*
, Young Woo Ok
, Elizabeth Chang
, Vijaykumar Upadhyaya
, Keeya Madani
, Keith Tate
, B. Rounsaville
, Chel Jong Choi
, V. Chandrasekaran
, V. Yelundur
, Atul Gupta
, Ajeet Rohatgi

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Georgia Institute of Technology
Suniva Inc.
Jeonbuk National University

Research output: Contribution to journal › Journal article › peer-review

24 Scopus citations

Abstract

This paper shows the results and the limitations of a 21% N-Cz 239-cm² screen-printed cell with blanket p⁺ emitter and n⁺ back surface field. In addition, we show the properties and impact of tunnel oxide capped with doped n⁺ polysilicon and metal on the back side, which can overcome those limitations. Since both the doped n⁺ layer and the metal contact are outside the bulk silicon wafer, the J_o is dramatically reduced, resulting in much higher V_oc. Process optimization has resulted in high iV_oc of 728 mV on symmetric structures. The unmetallized cell structure with Al₂O₃/SiN passivated lightly doped p⁺ emitter and a tunnel oxide/n⁺ poly back also gave high iV_oc of 734 mV. The finished screen-printed 132-cm² device gave a V_oc of 683 mV, J_sc of 39.4 mA/cm², FF of 77.6%, and an efficiency of 20.9%. Cell analysis show that implementation of a selective emitter can give higher efficiency.

Original language	English
Article number	7339421
Pages (from-to)	153-158
Number of pages	6
Journal	IEEE Journal of Photovoltaics
Volume	6
Issue number	1
DOIs	https://doi.org/10.1109/JPHOTOV.2015.2496861
State	Published - 2016.01

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Crystalline
n-type
passivated contact
poly silicon
tunnel oxide

Quacquarelli Symonds(QS) Subject Topics

Materials Science
Engineering - Electrical & Electronic
Engineering - Petroleum
Physics & Astronomy

Access to Document

10.1109/JPHOTOV.2015.2496861

Cite this

Upadhyaya, A. D., Ok, Y. W., Chang, E., Upadhyaya, V., Madani, K., Tate, K., Rounsaville, B., Choi, C. J., Chandrasekaran, V., Yelundur, V., Gupta, A., & Rohatgi, A. (2016). Ion-implanted screen-printed n-type solar cell with tunnel oxide passivated back contact. IEEE Journal of Photovoltaics, 6(1), 153-158. Article 7339421. https://doi.org/10.1109/JPHOTOV.2015.2496861

@article{ebe9db8e7933488b995de393c8538792,

title = "Ion-implanted screen-printed n-type solar cell with tunnel oxide passivated back contact",

abstract = "This paper shows the results and the limitations of a 21\% N-Cz 239-cm2 screen-printed cell with blanket p+ emitter and n+ back surface field. In addition, we show the properties and impact of tunnel oxide capped with doped n+ polysilicon and metal on the back side, which can overcome those limitations. Since both the doped n+ layer and the metal contact are outside the bulk silicon wafer, the Jo is dramatically reduced, resulting in much higher Voc. Process optimization has resulted in high iVoc of 728 mV on symmetric structures. The unmetallized cell structure with Al2O3/SiN passivated lightly doped p+ emitter and a tunnel oxide/n+ poly back also gave high iVoc of 734 mV. The finished screen-printed 132-cm2 device gave a Voc of 683 mV, Jsc of 39.4 mA/cm2, FF of 77.6\%, and an efficiency of 20.9\%. Cell analysis show that implementation of a selective emitter can give higher efficiency.",

keywords = "Crystalline, n-type, passivated contact, poly silicon, tunnel oxide",

author = "Upadhyaya, \{Ajay D.\} and Ok, \{Young Woo\} and Elizabeth Chang and Vijaykumar Upadhyaya and Keeya Madani and Keith Tate and B. Rounsaville and Choi, \{Chel Jong\} and V. Chandrasekaran and V. Yelundur and Atul Gupta and Ajeet Rohatgi",

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doi = "10.1109/JPHOTOV.2015.2496861",

language = "English",

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TY - JOUR

T1 - Ion-implanted screen-printed n-type solar cell with tunnel oxide passivated back contact

AU - Upadhyaya, Ajay D.

AU - Ok, Young Woo

AU - Chang, Elizabeth

AU - Upadhyaya, Vijaykumar

AU - Madani, Keeya

AU - Tate, Keith

AU - Rounsaville, B.

AU - Choi, Chel Jong

AU - Chandrasekaran, V.

AU - Yelundur, V.

AU - Gupta, Atul

AU - Rohatgi, Ajeet

PY - 2016/1

Y1 - 2016/1

N2 - This paper shows the results and the limitations of a 21% N-Cz 239-cm2 screen-printed cell with blanket p+ emitter and n+ back surface field. In addition, we show the properties and impact of tunnel oxide capped with doped n+ polysilicon and metal on the back side, which can overcome those limitations. Since both the doped n+ layer and the metal contact are outside the bulk silicon wafer, the Jo is dramatically reduced, resulting in much higher Voc. Process optimization has resulted in high iVoc of 728 mV on symmetric structures. The unmetallized cell structure with Al2O3/SiN passivated lightly doped p+ emitter and a tunnel oxide/n+ poly back also gave high iVoc of 734 mV. The finished screen-printed 132-cm2 device gave a Voc of 683 mV, Jsc of 39.4 mA/cm2, FF of 77.6%, and an efficiency of 20.9%. Cell analysis show that implementation of a selective emitter can give higher efficiency.

AB - This paper shows the results and the limitations of a 21% N-Cz 239-cm2 screen-printed cell with blanket p+ emitter and n+ back surface field. In addition, we show the properties and impact of tunnel oxide capped with doped n+ polysilicon and metal on the back side, which can overcome those limitations. Since both the doped n+ layer and the metal contact are outside the bulk silicon wafer, the Jo is dramatically reduced, resulting in much higher Voc. Process optimization has resulted in high iVoc of 728 mV on symmetric structures. The unmetallized cell structure with Al2O3/SiN passivated lightly doped p+ emitter and a tunnel oxide/n+ poly back also gave high iVoc of 734 mV. The finished screen-printed 132-cm2 device gave a Voc of 683 mV, Jsc of 39.4 mA/cm2, FF of 77.6%, and an efficiency of 20.9%. Cell analysis show that implementation of a selective emitter can give higher efficiency.

KW - Crystalline

KW - n-type

KW - passivated contact

KW - poly silicon

KW - tunnel oxide

UR - https://www.scopus.com/pages/publications/84949921264

U2 - 10.1109/JPHOTOV.2015.2496861

DO - 10.1109/JPHOTOV.2015.2496861

M3 - Journal article

AN - SCOPUS:84949921264

SN - 2156-3381

VL - 6

SP - 153

EP - 158

JO - IEEE Journal of Photovoltaics

JF - IEEE Journal of Photovoltaics

IS - 1

M1 - 7339421

ER -

Ion-implanted screen-printed n-type solar cell with tunnel oxide passivated back contact

Abstract

UN SDGs

Keywords

Quacquarelli Symonds(QS) Subject Topics

Access to Document

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