Abstract
Originating from a non-radiative recombination in the active region of a light-emitting diode (LED), the self-heating effect was investigated under continuous wave (cw) operation with a GaInN blue LED. Current–voltage (I–V) characteristics under pulse operation that lacked self-heating were measured and compared with the corresponding I–V measurement under the cw operation. Accordingly, a comparison of the measured I–V curves enabled estimation of the junction temperature of the LED during the cw operation. The junction temperature of the device increased as high as 323 K at an input current of 480 mA. The operating current showed a weaker temperature dependence in accordance with the bias increase, which is explained by the expansion of the Shockley diode equation.
| Original language | English |
|---|---|
| Pages (from-to) | 8-11 |
| Number of pages | 4 |
| Journal | Thin Solid Films |
| Volume | 641 |
| DOIs | |
| State | Published - 2017.11.1 |
Keywords
- Gallium nitride
- Junction temperature
- Light-emitting diode
- Self-heating
Quacquarelli Symonds(QS) Subject Topics
- Materials Science
- Physics & Astronomy
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