Abstract
This work demonstrates a large-scale batch fabrication of GaN light-emitting diodes (LEDs) with patterned multi-layer graphene (MLG) as transparent conducting electrodes. MLG films were synthesized using a chemical vapor deposition (CVD) technique on nickel films and showed typical CVD-synthesized MLG film properties, possessing a sheet resistance of ∼620 Ω□ with a transparency of more than 85% in the 400-800 nm wavelength range. The MLG was applied as the transparent conducting electrodes of GaN-based blue LEDs, and the light output performance was compared to that of conventional GaN LEDs with indium tin oxide electrodes. Our results present a potential development toward future practical application of graphene electrodes in optoelectronic devices.
| Original language | English |
|---|---|
| Article number | 175201 |
| Journal | Nanotechnology |
| Volume | 21 |
| Issue number | 17 |
| DOIs | |
| State | Published - 2010.04.30 |
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