Lasing characteristics of high-performance narrow-stripe InGaAs-GaAs quantum-well lasers confined by AlAs native oxide

Yong Cheng; P. Daniel Dapkus; Michael H. MacDougal; Gye Mo Yang

doi:10.1109/68.484232

Lasing characteristics of high-performance narrow-stripe InGaAs-GaAs quantum-well lasers confined by AlAs native oxide

Yong Cheng^*
, P. Daniel Dapkus
, Michael H. MacDougal
, Gye Mo Yang

^*Corresponding author for this work

Department of Semiconductor Science and Technology

University of Southern California
IEEE

Research output: Contribution to journal › Journal article › peer-review

21 Scopus citations

Abstract

High-performance narrow-stripe InGaAs-GaAs quantum-well lasers with integral buried AlAs native-oxide layers have been fabricated. AlAs native-oxide layers above and below waveguide region were employed for current and optical confinement to form narrow-stripe lasers. A low temperature (400 °C) anisotropic wet oxidation technique was used to selectively oxidize AlAs layers in the epitaxial structure. The devices demonstrated continuous wave threshold currents of 3.5 mA, external quantum efficiencies of 82%, and a characteristic temperature of 133 K for 1.8 μm-wide aperture, 400 μm-long devices. Threshold currents of 1.7 mA were obtained by applying HR/HR coatings.

Original language	English
Pages (from-to)	176-178
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	8
Issue number	2
DOIs	https://doi.org/10.1109/68.484232
State	Published - 1996.02

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@article{3d11345c967145b4ad166f9ba37b02da,

title = "Lasing characteristics of high-performance narrow-stripe InGaAs-GaAs quantum-well lasers confined by AlAs native oxide",

abstract = "High-performance narrow-stripe InGaAs-GaAs quantum-well lasers with integral buried AlAs native-oxide layers have been fabricated. AlAs native-oxide layers above and below waveguide region were employed for current and optical confinement to form narrow-stripe lasers. A low temperature (400 °C) anisotropic wet oxidation technique was used to selectively oxidize AlAs layers in the epitaxial structure. The devices demonstrated continuous wave threshold currents of 3.5 mA, external quantum efficiencies of 82\%, and a characteristic temperature of 133 K for 1.8 μm-wide aperture, 400 μm-long devices. Threshold currents of 1.7 mA were obtained by applying HR/HR coatings.",

author = "Yong Cheng and Dapkus, \{P. Daniel\} and MacDougal, \{Michael H.\} and Yang, \{Gye Mo\}",

year = "1996",

month = feb,

doi = "10.1109/68.484232",

language = "English",

volume = "8",

pages = "176--178",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

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T1 - Lasing characteristics of high-performance narrow-stripe InGaAs-GaAs quantum-well lasers confined by AlAs native oxide

AU - Cheng, Yong

AU - Dapkus, P. Daniel

AU - MacDougal, Michael H.

AU - Yang, Gye Mo

PY - 1996/2

Y1 - 1996/2

N2 - High-performance narrow-stripe InGaAs-GaAs quantum-well lasers with integral buried AlAs native-oxide layers have been fabricated. AlAs native-oxide layers above and below waveguide region were employed for current and optical confinement to form narrow-stripe lasers. A low temperature (400 °C) anisotropic wet oxidation technique was used to selectively oxidize AlAs layers in the epitaxial structure. The devices demonstrated continuous wave threshold currents of 3.5 mA, external quantum efficiencies of 82%, and a characteristic temperature of 133 K for 1.8 μm-wide aperture, 400 μm-long devices. Threshold currents of 1.7 mA were obtained by applying HR/HR coatings.

AB - High-performance narrow-stripe InGaAs-GaAs quantum-well lasers with integral buried AlAs native-oxide layers have been fabricated. AlAs native-oxide layers above and below waveguide region were employed for current and optical confinement to form narrow-stripe lasers. A low temperature (400 °C) anisotropic wet oxidation technique was used to selectively oxidize AlAs layers in the epitaxial structure. The devices demonstrated continuous wave threshold currents of 3.5 mA, external quantum efficiencies of 82%, and a characteristic temperature of 133 K for 1.8 μm-wide aperture, 400 μm-long devices. Threshold currents of 1.7 mA were obtained by applying HR/HR coatings.

UR - https://www.scopus.com/pages/publications/0030085682

U2 - 10.1109/68.484232

DO - 10.1109/68.484232

M3 - Journal article

AN - SCOPUS:0030085682

SN - 1041-1135

VL - 8

SP - 176

EP - 178

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 2

ER -

Lasing characteristics of high-performance narrow-stripe InGaAs-GaAs quantum-well lasers confined by AlAs native oxide

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