Lateral epitaxial overgrowth of GaN and its crystallographic tilt depending on the growth condition

Y. H. Song; S. C. Choi; J. Y. Choi; J. W. Yang; G. M. Yang

doi:10.1002/1521-396X(200007)180:1<247::AID-PSSA247>3.0.CO;2-N

Lateral epitaxial overgrowth of GaN and its crystallographic tilt depending on the growth condition

Y. H. Song^*
, S. C. Choi
, J. Y. Choi
, J. W. Yang
, G. M. Yang

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Jeonbuk National University

Research output: Contribution to journal › Conference article › peer-review

7 Scopus citations

Abstract

We have investigated the effect of growth parameters on the GaN structure grown by lateral epitaxial overgrowth (LEO) on SiN_x/GaN/Al₂O₃ wafers by low-pressure metalorganic chemical vapor deposition. The ratio of lateral to vertical growth rates (γ) is increased with increasing growth temperature and V/III ratio. Crystallographic tilting of LEO GaN strongly depends on the growth condition. At low growth temperature and high reactor pressure, γ is below unity and LEO GaN has a trapezoidal shape. Under this regrowth condition, the tilt angle of LEO GaN is decreased.

Original language	English
Pages (from-to)	247-250
Number of pages	4
Journal	Physica Status Solidi (A) Applied Research
Volume	180
Issue number	1
DOIs	https://doi.org/10.1002/1521-396X(200007)180:1<247::AID-PSSA247>3.0.CO;2-N
State	Published - 2000.07
Event	3rd International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000) - Zeuthen/Berlin, Ger Duration: 2000.03.6 → 2000.03.10

Quacquarelli Symonds(QS) Subject Topics

Materials Science
Physics & Astronomy

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10.1002/1521-396X(200007)180:1<247::AID-PSSA247>3.0.CO;2-N

Cite this

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title = "Lateral epitaxial overgrowth of GaN and its crystallographic tilt depending on the growth condition",

abstract = "We have investigated the effect of growth parameters on the GaN structure grown by lateral epitaxial overgrowth (LEO) on SiNx/GaN/Al2O3 wafers by low-pressure metalorganic chemical vapor deposition. The ratio of lateral to vertical growth rates (γ) is increased with increasing growth temperature and V/III ratio. Crystallographic tilting of LEO GaN strongly depends on the growth condition. At low growth temperature and high reactor pressure, γ is below unity and LEO GaN has a trapezoidal shape. Under this regrowth condition, the tilt angle of LEO GaN is decreased.",

author = "Song, \{Y. H.\} and Choi, \{S. C.\} and Choi, \{J. Y.\} and Yang, \{J. W.\} and Yang, \{G. M.\}",

year = "2000",

month = jul,

doi = "10.1002/1521-396X(200007)180:1<247::AID-PSSA247>3.0.CO;2-N",

language = "English",

volume = "180",

pages = "247--250",

journal = "Physica Status Solidi (A) Applied Research",

issn = "0031-8965",

number = "1",

note = "3rd International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000) ; Conference date: 06-03-2000 Through 10-03-2000",

}

TY - JOUR

T1 - Lateral epitaxial overgrowth of GaN and its crystallographic tilt depending on the growth condition

AU - Song, Y. H.

AU - Choi, S. C.

AU - Choi, J. Y.

AU - Yang, J. W.

AU - Yang, G. M.

PY - 2000/7

Y1 - 2000/7

N2 - We have investigated the effect of growth parameters on the GaN structure grown by lateral epitaxial overgrowth (LEO) on SiNx/GaN/Al2O3 wafers by low-pressure metalorganic chemical vapor deposition. The ratio of lateral to vertical growth rates (γ) is increased with increasing growth temperature and V/III ratio. Crystallographic tilting of LEO GaN strongly depends on the growth condition. At low growth temperature and high reactor pressure, γ is below unity and LEO GaN has a trapezoidal shape. Under this regrowth condition, the tilt angle of LEO GaN is decreased.

AB - We have investigated the effect of growth parameters on the GaN structure grown by lateral epitaxial overgrowth (LEO) on SiNx/GaN/Al2O3 wafers by low-pressure metalorganic chemical vapor deposition. The ratio of lateral to vertical growth rates (γ) is increased with increasing growth temperature and V/III ratio. Crystallographic tilting of LEO GaN strongly depends on the growth condition. At low growth temperature and high reactor pressure, γ is below unity and LEO GaN has a trapezoidal shape. Under this regrowth condition, the tilt angle of LEO GaN is decreased.

UR - https://www.scopus.com/pages/publications/0034224332

U2 - 10.1002/1521-396X(200007)180:1<247::AID-PSSA247>3.0.CO;2-N

DO - 10.1002/1521-396X(200007)180:1<247::AID-PSSA247>3.0.CO;2-N

M3 - Conference article

AN - SCOPUS:0034224332

SN - 0031-8965

VL - 180

SP - 247

EP - 250

JO - Physica Status Solidi (A) Applied Research

JF - Physica Status Solidi (A) Applied Research

IS - 1

T2 - 3rd International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000)

Y2 - 6 March 2000 through 10 March 2000

ER -

Lateral epitaxial overgrowth of GaN and its crystallographic tilt depending on the growth condition

Abstract

Quacquarelli Symonds(QS) Subject Topics

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