Lateral wet oxidation of AlxGa1-xAs-GaAs depending on its structures

J. H. Kim; D. H. Lim; K. S. Kim; G. M. Yang; K. Y. Lim; H. J. Lee

doi:10.1063/1.117305

Lateral wet oxidation of Al_xGa_1-xAs-GaAs depending on its structures

J. H. Kim^*
, D. H. Lim
, K. S. Kim
, G. M. Yang
, K. Y. Lim
, H. J. Lee

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Jeonbuk National University

Research output: Contribution to journal › Journal article › peer-review

49 Scopus citations

Abstract

Data are presented demonstrating that the lateral wet oxidation of Al(Ga)As layer is strongly influenced by its thicknesses and heterointerface structures as well as Al compositions. The oxidation length decreases rapidly with decreasing AlAs thickness in the range of <80 nm and oxidation nearly stops at a thickness of ∼11 nm. Also, the oxidation rate of Al_xGa_1-xAs decreases quickly with decreasing Al composition, providing a high degree of oxidation selectivity. AlGaAs layers on both sides of AlAs layer reduce the lateral oxidation rate which is enhanced by the stress induced by oxidized AlAs.

Original language	English
Pages (from-to)	3357-3359
Number of pages	3
Journal	Applied Physics Letters
Volume	69
Issue number	22
DOIs	https://doi.org/10.1063/1.117305
State	Published - 1996.11.25

Quacquarelli Symonds(QS) Subject Topics

Physics & Astronomy

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10.1063/1.117305

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@article{6d70299dda3c458985c0634f4e677685,

title = "Lateral wet oxidation of AlxGa1-xAs-GaAs depending on its structures",

abstract = "Data are presented demonstrating that the lateral wet oxidation of Al(Ga)As layer is strongly influenced by its thicknesses and heterointerface structures as well as Al compositions. The oxidation length decreases rapidly with decreasing AlAs thickness in the range of <80 nm and oxidation nearly stops at a thickness of ∼11 nm. Also, the oxidation rate of AlxGa1-xAs decreases quickly with decreasing Al composition, providing a high degree of oxidation selectivity. AlGaAs layers on both sides of AlAs layer reduce the lateral oxidation rate which is enhanced by the stress induced by oxidized AlAs.",

author = "Kim, \{J. H.\} and Lim, \{D. H.\} and Kim, \{K. S.\} and Yang, \{G. M.\} and Lim, \{K. Y.\} and Lee, \{H. J.\}",

year = "1996",

month = nov,

day = "25",

doi = "10.1063/1.117305",

language = "English",

volume = "69",

pages = "3357--3359",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "22",

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TY - JOUR

T1 - Lateral wet oxidation of AlxGa1-xAs-GaAs depending on its structures

AU - Kim, J. H.

AU - Lim, D. H.

AU - Kim, K. S.

AU - Yang, G. M.

AU - Lim, K. Y.

AU - Lee, H. J.

PY - 1996/11/25

Y1 - 1996/11/25

N2 - Data are presented demonstrating that the lateral wet oxidation of Al(Ga)As layer is strongly influenced by its thicknesses and heterointerface structures as well as Al compositions. The oxidation length decreases rapidly with decreasing AlAs thickness in the range of <80 nm and oxidation nearly stops at a thickness of ∼11 nm. Also, the oxidation rate of AlxGa1-xAs decreases quickly with decreasing Al composition, providing a high degree of oxidation selectivity. AlGaAs layers on both sides of AlAs layer reduce the lateral oxidation rate which is enhanced by the stress induced by oxidized AlAs.

AB - Data are presented demonstrating that the lateral wet oxidation of Al(Ga)As layer is strongly influenced by its thicknesses and heterointerface structures as well as Al compositions. The oxidation length decreases rapidly with decreasing AlAs thickness in the range of <80 nm and oxidation nearly stops at a thickness of ∼11 nm. Also, the oxidation rate of AlxGa1-xAs decreases quickly with decreasing Al composition, providing a high degree of oxidation selectivity. AlGaAs layers on both sides of AlAs layer reduce the lateral oxidation rate which is enhanced by the stress induced by oxidized AlAs.

UR - https://www.scopus.com/pages/publications/0001602772

U2 - 10.1063/1.117305

DO - 10.1063/1.117305

M3 - Journal article

AN - SCOPUS:0001602772

SN - 0003-6951

VL - 69

SP - 3357

EP - 3359

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

ER -

Lateral wet oxidation of Al_xGa_1-xAs-GaAs depending on its structures

Abstract

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